Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Group IV direct band gap photonics: methods, challenges, and opportunities
The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …
Lasing in direct-bandgap GeSn alloy grown on Si
Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently,
because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To …
because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To …
Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K
V Reboud, A Gassenq, N Pauc, J Aubin… - Applied Physics …, 2017 - pubs.aip.org
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …
Direct bandgap group IV epitaxy on Si for laser applications
N Von Den Driesch, D Stange, S Wirths… - Chemistry of …, 2015 - ACS Publications
The recent observation of a fundamental direct bandgap for GeSn group IV alloys and the
demonstration of low temperature lasing provide new perspectives on the fabrication of Si …
demonstration of low temperature lasing provide new perspectives on the fabrication of Si …
Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys
A comprehensive study of optical transitions in direct-bandgap Ge0. 875Sn0. 125 group IV
alloys via photoluminescence measurements as a function of temperature, compressive …
alloys via photoluminescence measurements as a function of temperature, compressive …
Germanium based photonic components toward a full silicon/germanium photonic platform
V Reboud, A Gassenq, JM Hartmann, J Widiez… - Progress in Crystal …, 2017 - Elsevier
Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content
A Gassenq, L Milord, J Aubin, N Pauc, K Guilloy… - Applied Physics …, 2017 - pubs.aip.org
GeSn alloys are the subject of intense research activities as these group IV semiconductors
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …
Critical thickness for strain relaxation of Ge1− xSnx (x≤ 0.17) grown by molecular beam epitaxy on Ge (001)
We investigated the critical thickness (hc) for plastic relaxation of Ge 1− x Sn x grown by
molecular beam epitaxy. Ge 1− x Sn x films with various Sn mole fraction x (x≤ 0.17) and …
molecular beam epitaxy. Ge 1− x Sn x films with various Sn mole fraction x (x≤ 0.17) and …
Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
D Rainko, Z Ikonic, N Vukmirović, D Stange… - Scientific reports, 2018 - nature.com
Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research
efforts for the realization of electrically pumped group IV lasers monolithically integrated on …
efforts for the realization of electrically pumped group IV lasers monolithically integrated on …