Complementary metal–oxide–semiconductor (CMOS) logic circuits at their ultimate scaling
limits place extreme demands on the properties of all materials involved. The requirements …

Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …

The shrinking of transistors has hit a wall of material degradation and the specialized
electronic applications for complex scenarios have raised challenges in heterostructures …

Silicene is one of the most promising two-dimensional (2D) materials for the realization of
next-generation electronic devices, owing to its high carrier mobility and band gap tunability …

Metal/CaF 2/p-Si (111) capacitors with the improved-quality several-nanometer-thick
epitaxial fluorite films are examined, aiming at solidifying a candidacy of this material for …

The capacitance-voltage (CV) hysteresis in the bidirectional measurements of the p-GaN
metal-insulator-semiconductor (MIS) capacitor is suppressed by using a CaF 2 dielectric …

Over the past decades, the continued scaling of transistors has reduced the energy
consumption for every switching event and has increased the computational power of …

A novel resistance switching memory using CaF 2/Si/CaF 2 resonant-tunneling quantum
well heterostructures sandwiched by nanocrystalline Si (nc-Si) as secondary barrier layers …

The algorithm is suggested for calculating the I–V characteristics of a voltage-or current-
controlled metal-tunnel-thin insulator-semiconductor system. The basic underlying physical …

In this work epitaxial growth of cobalt on CaF2 (111),(110) and (001) surfaces has been
extensively studied. It has been shown by atomic force microscopy that at selected growth …