Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process
YOU Wen-Chun, KC Tu, CY Chang… - US Patent …, 2018 - Google Patents
A method of forming a magnetoresistive random access memory (MRAM) device including a
perpendicular MTJ (magnetic tunnel junction) is provided. The method includes forming a …
perpendicular MTJ (magnetic tunnel junction) is provided. The method includes forming a …
Precessional spin current structure with non-magnetic insertion layer for MRAM
BA Kardasz, MM Pinarbasi - US Patent 10,665,777, 2020 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
Precessional spin current structure with high in-plane magnetization for MRAM
MM Pinarbasi, BA Kardasz - US Patent 10,672,976, 2020 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
Polishing stop layer (s) for processing arrays of semiconductor elements
MM Pinarbasi, JA Hernandez, A Datta… - US Patent …, 2017 - Google Patents
Described embodiments can be used in semiconductor manufacturing and employ materials
with high and low polish rates to help determine a precise polish end point that is consistent …
with high and low polish rates to help determine a precise polish end point that is consistent …
Techniques for MRAM MTJ top electrode connection
CY Hsu, SC Liu - US Patent 9,818,935, 2017 - Google Patents
Some embodiments relate to an integrated circuit including a magnetoresistive random-
access memory (MRAM) cell. The integrated circuit includes a semiconductor substrate and …
access memory (MRAM) cell. The integrated circuit includes a semiconductor substrate and …
High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
BA Kardasz, MM Pinarbasi, JA Hernandez - US Patent 10,468,590, 2019 - Google Patents
A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a
structure is disclosed. The pSAF structure can be a first high perpendicular Magnetic …
structure is disclosed. The pSAF structure can be a first high perpendicular Magnetic …
Magnetic random access memory
T Kajiyama - US Patent 9,000,545, 2015 - Google Patents
BACKGROUND In recent years, a magnetic random access memory (MRAM) has been
expected as a nonvolatile RAM alternative to a DRAM+ NOR flash memory. In the current …
expected as a nonvolatile RAM alternative to a DRAM+ NOR flash memory. In the current …
Precessional spin current structure for MRAM
MM Pinarbasi, M Tzoufras, BA Kardasz - US Patent 10,026,892, 2018 - Google Patents
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a
magnetic tunnel junction stack having a significantly improved performance of the free layer …
magnetic tunnel junction stack having a significantly improved performance of the free layer …
Memory cells, methods of fabrication, and semiconductor devices
M Siddik, A Lyle, W Kula - US Patent 9,608,197, 2017 - Google Patents
(57) ABSTRACT A magnetic cell includes an attracter material proximate to a magnetic
region (eg, a free region). The attracter material is formulated to have a higher chemical …
region (eg, a free region). The attracter material is formulated to have a higher chemical …
Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
GS Sandhu, W Kula - US Patent 9,461,242, 2016 - Google Patents
A magnetic cell includes a free region between an intermediate oxide region (eg, a tunnel
barrier) and a secondary oxide region. Both oxide regions may be configured to induce …
barrier) and a secondary oxide region. Both oxide regions may be configured to induce …