Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review
N Islam, MFP Mohamed, MFAJ Khan, S Falina… - Crystals, 2022 - mdpi.com
A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs
The drain induced dynamic threshold voltage () shift of a-GaN gate HEMT with a Schottky
gate contact is investigated, and the underlying mechanisms are explained with a charge …
gate contact is investigated, and the underlying mechanisms are explained with a charge …
VTH Instability of -GaN Gate HEMTs Under Static and Dynamic Gate Stress
J He, G Tang, KJ Chen - IEEE Electron Device Letters, 2018 - ieeexplore.ieee.org
The impacts of static and dynamic gate stress on the threshold voltage () instability in
Schottky-type-GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally …
Schottky-type-GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally …
Dynamic on-resistance in GaN power devices: Mechanisms, characterizations, and modeling
S Yang, S Han, K Sheng… - IEEE Journal of Emerging …, 2019 - ieeexplore.ieee.org
Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type -GaN Gate HEMTs
In this paper, we carried out a systematic investigation on gate degradation and the physical
mechanism of the Schottky-type p-GaN gate HEMTs under positive gate voltage stress. The …
mechanism of the Schottky-type p-GaN gate HEMTs under positive gate voltage stress. The …
Stability and reliability of lateral GaN power field-effect transistors
JA Del Alamo, ES Lee - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
Identification of trap states in p-GaN layer of a p-GaN/AlGaN/GaN power HEMT structure by deep-level transient spectroscopy
In this work, the deep-level transient spectroscopy (DLTS) is conducted to investigate the
gate stack of the p-GaN gate HEMT with Schottky gate contact. A metal/p-GaN/AlGaN/GaN …
gate stack of the p-GaN gate HEMT with Schottky gate contact. A metal/p-GaN/AlGaN/GaN …