Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si1-xGex by ion implantation and subsequent nanosecond laser annealing
K Lee, C Jo, D Yoon, S Baik, DH Ko - Applied Surface Science, 2024 - Elsevier
Given that transistor dimensions are approaching atomic scale in metal–oxide–
semiconductor field-effect-transistors (MOSFETs), attaining low-contact resistivity (ρ c) …
semiconductor field-effect-transistors (MOSFETs), attaining low-contact resistivity (ρ c) …
Strain behavior and dopant activation of heavily in-situ B-doped SiGe epitaxial films treated by nanosecond laser annealing
C Jo, K Lee, D Yoon, DH Ko - Materials Science in Semiconductor …, 2024 - Elsevier
Heavily doped epitaxial films with an active dopant concentration over 1× 10 21/cm 3 in the
source/drain regions are key requirements for advanced metal-oxide-semiconductor field …
source/drain regions are key requirements for advanced metal-oxide-semiconductor field …