Methods and apparatuses for depositing material into high aspect ratio features, features in
a multi-laminate stack, features having positively sloped sidewalls, features having …

Provided herein are methods and apparatus for filling one or more gaps on a semiconductor
substrate. The disclosed embodiments are especially useful for forming seam-free, void-free …

Methods and apparatuses for depositing films in high aspect ratio features and trenches on
substrates using atomic layer deposition and deposition of a sacrificial layer during atomic …

Methods for depositing conformal films using a halogen-containing etchant during atomic
layer deposition are provided. Methods involve exposing a substrate to a halogen …

Methods and apparatuses for depositing films in high aspect ratio features and trenches
using a post-dose treatment operation during atomic layer deposition are provided. Post …

Provided are methods and apparatuses for depositing a nitride film using one or more
plasma-enhanced atomic layer deposition cycles and one or more thermal atomic layer …

US11124876B2 - Si-containing film forming precursors and methods of using the same -
Google Patents US11124876B2 - Si-containing film forming precursors and methods of using …

Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic
layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of …

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The
precursors have the for mula:(SiHz) N—SiH, X, wherein X is selected from a halogen atom; …

Methods of depositing silicon nitride encapsulation layers by atomic layer deposition over
memory devices including chalcogenide material are provided herein. Methods include …