The design of high‐density non‐volatile memories is a long‐standing dream, limited by
conventional storage “0” or “1” bits. An alternative paradigm exists in which regions within …

We demonstrated current-induced four-state magnetization switching in a trilayer system
using spin-orbit torques. The memory device contains two Co layers with different …

High-intensity laser irradiation can effectively couple to practically all kinds of materials,
causing modification of their physical properties due to laser-induced phase transformations …

Using the finite cluster approximation (FCA) based on a single-site cluster theory and Monte
Carlo simulation (MCS) under the Metropolis algorithm, we study the critical properties of …

Permalloy copper (CuPy) structures, produced by low cost vacuum free pulsed
electrodeposition technique, present relevant results as magnetic material properties …

The effect of combined presence of iron and nickel has been studied in rapidly quenched
amorphous (Fe-Ni) 81 Nb 7 B 12 system with the ratio of Fe/Ni= 2/1 and 1/2 in as-quenched …

利用氧化钽缓冲层对垂直各向异性钴铂多层膜磁性的影响, 构想并验证了一种四态存储器单元.
存储器器件包含两个区域, 其中一区域的钴铂多层膜[Pt (3 nm)/Co (0.47 nm)/Pt (1.5 nm)] …

Magnetic phase change memory (MAG PCM) consists of bits with different magnetic
permeability values. The bits are read by measuring their effect on a magnetic probe field …

Steps are described in the development of a new magnetic memory technology, based on
states with different magnetic permeability, with the capability to reliably store large amounts …

Finding better methods for storing information was a serious problem for the earliest
computers; considerable effort is still being devoted to decreasing the cost and increasing …