Recently, high-performance III–V semiconductor nanowires (NWs) have been extensively
explored as promising active material candidates for high-sensitivity and broad-spectrum …

This article reviews metal organic vapour phase epitaxy (MOVPE) processes developed for
the group 13 nitrides AlN, GaN, InN and their alloys. The binaries are direct-gap …

Effects due to phase separation in InGaN have been identified as having major effects on
the performance of devices, in particular light-emitting diodes (LEDs) and injection lasers …

Aberration-corrected high-resolution transmission electron microscopy (HRTEM) is used to
measure strain in a strained-silicon metal-oxide-semiconductor field-effect transistor. Strain …

The structural and optical properties of InGaN/GaN nanowire heterostructures grown by
plasma-assisted molecular beam epitaxy have been studied using a combination of …

Stranski–Krastanov (SK) growth mode is widely adopted for the self-assembled growth of
semiconductor quantum dots (QDs), wherein a relatively large critical thickness is essential …

The startling success of GaN-based light emitting diodes despite the high density of
dislocations found in typical heteroepitaxial material has been attributed to localization of …

We investigate the structural properties of a series of high alloy content InGaN epilayers
grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature …

The morphology and microstructure of A 1− x B x C semiconductor alloys depend on the
type of thermodynamic states established during growth. We distinguish three main cases:(i) …

We demonstrate high, up to 30% In content InGaN sub-micrometer platelets on GaN by
metalorganic vapor phase epitaxy. These InGaN platelets were selectively grown on flat …