Binary metal oxide-based resistive switching memory devices: A status review
Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
M Hellenbrand, J MacManus-Driscoll - Nano Convergence, 2023 - Springer
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
An electroforming-free, analog interface-type memristor based on a SrFeOx epitaxial heterojunction for neuromorphic computing
Distinct from the conductive filament-type counterparts, the interface-type resistive switching
(RS) devices are electroforming-free and exhibit bidirectionally continuous conductance …
(RS) devices are electroforming-free and exhibit bidirectionally continuous conductance …
Applications and impacts of nanoscale thermal transport in electronics packaging
RJ Warzoha, AA Wilson… - Journal of …, 2021 - asmedigitalcollection.asme.org
This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …
abatement in power electronics applications. Specifically, we highlight the importance of …
Memristive Synapses for Brain‐Inspired Computing
J Wang, F Zhuge - Advanced Materials Technologies, 2019 - Wiley Online Library
Although the structure and function of the human brain are still far from being fully
understood, brain‐inspired computing architectures mainly consisting of artificial neurons …
understood, brain‐inspired computing architectures mainly consisting of artificial neurons …
Dielectric-engineered high-speed, low-power, highly reliable charge trap flash-based synaptic device for neuromorphic computing beyond inference
The coming of the big-data era brought a need for power-efficient computing that cannot be
realized in the Von Neumann architecture. Neuromorphic computing which is motivated by …
realized in the Von Neumann architecture. Neuromorphic computing which is motivated by …
High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite Memristors
With a striking explosion of digital information, organic–inorganic halide perovskite (OHP)
memristors have been regarded as a promising solution to break the von Neumann …
memristors have been regarded as a promising solution to break the von Neumann …
Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory
The analog resistive switching properties of amorphous InGaZnOx (a-IGZO)-based devices
with Al as the top and bottom electrodes and an Al–Ox interface layer inserted on the bottom …
with Al as the top and bottom electrodes and an Al–Ox interface layer inserted on the bottom …
To the issue of the memristor's hrs and lrs states degradation and data retention time
AV Fadeev, KV Rudenko - Russian Microelectronics, 2021 - Springer
In this review of experimental studies, the retention time and endurance of memristor RRAM
memory elements based on reversible resistive switching in oxide dielectrics are studied …
memory elements based on reversible resistive switching in oxide dielectrics are studied …
Multilevel Conductance States of Vapor‐Transport‐Deposited Sb2S3 Memristors Achieved via Electrical and Optical Modulation
The pursuit of advanced brain‐inspired electronic devices and memory technologies has led
to explore novel materials by processing multimodal and multilevel tailored conductive …
to explore novel materials by processing multimodal and multilevel tailored conductive …