Binary metal oxide-based resistive switching memory devices: A status review

AR Patil, TD Dongale, RK Kamat, KY Rajpure - Materials Today …, 2023 - Elsevier
Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …

Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing

M Hellenbrand, J MacManus-Driscoll - Nano Convergence, 2023 - Springer
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …

An electroforming-free, analog interface-type memristor based on a SrFeOx epitaxial heterojunction for neuromorphic computing

J Rao, Z Fan, L Hong, S Cheng, Q Huang, J Zhao… - Materials Today …, 2021 - Elsevier
Distinct from the conductive filament-type counterparts, the interface-type resistive switching
(RS) devices are electroforming-free and exhibit bidirectionally continuous conductance …

Applications and impacts of nanoscale thermal transport in electronics packaging

RJ Warzoha, AA Wilson… - Journal of …, 2021 - asmedigitalcollection.asme.org
This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …

Memristive Synapses for Brain‐Inspired Computing

J Wang, F Zhuge - Advanced Materials Technologies, 2019 - Wiley Online Library
Although the structure and function of the human brain are still far from being fully
understood, brain‐inspired computing architectures mainly consisting of artificial neurons …

Dielectric-engineered high-speed, low-power, highly reliable charge trap flash-based synaptic device for neuromorphic computing beyond inference

JP Kim, SK Kim, S Park, S Kuk, T Kim, BH Kim… - Nano Letters, 2023 - ACS Publications
The coming of the big-data era brought a need for power-efficient computing that cannot be
realized in the Von Neumann architecture. Neuromorphic computing which is motivated by …

High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite Memristors

Z Liu, H Tang, P Cheng, R Kang, J Zhou… - Advanced Electronic …, 2023 - Wiley Online Library
With a striking explosion of digital information, organic–inorganic halide perovskite (OHP)
memristors have been regarded as a promising solution to break the von Neumann …

Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory

GR Haripriya, HY Noh, CK Lee, JS Kim, MJ Lee… - Nanoscale, 2023 - pubs.rsc.org
The analog resistive switching properties of amorphous InGaZnOx (a-IGZO)-based devices
with Al as the top and bottom electrodes and an Al–Ox interface layer inserted on the bottom …

To the issue of the memristor's hrs and lrs states degradation and data retention time

AV Fadeev, KV Rudenko - Russian Microelectronics, 2021 - Springer
In this review of experimental studies, the retention time and endurance of memristor RRAM
memory elements based on reversible resistive switching in oxide dielectrics are studied …

Multilevel Conductance States of Vapor‐Transport‐Deposited Sb2S3 Memristors Achieved via Electrical and Optical Modulation

SS Kundale, PS Pawar, DD Kumbhar… - Advanced …, 2024 - Wiley Online Library
The pursuit of advanced brain‐inspired electronic devices and memory technologies has led
to explore novel materials by processing multimodal and multilevel tailored conductive …