Enablers for overcurrent capability of silicon-carbide-based power converters: An overview

S Bhadoria, F Dijkhuizen, R Raj, X Wang… - IEEE transactions on …, 2022 - ieeexplore.ieee.org
With the increase in penetration of power electronic converters in the power systems, a
demand for overcurrent/overloading capability has risen for the fault clearance duration. This …

Auxiliary power supplies for high-power converter submodules: State of the art and future prospects

S Heinig, K Jacobs, K Ilves, S Norrga… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Recent developments in medium-voltage (MV) silicon and silicon carbide (SiC) power
semiconductor devices are challenging state-of-the-art converter and auxiliary power supply …

Short-circuit capability prediction and failure mode of asymmetric and double trench SiC MOSFETs

X Deng, X Li, X Li, H Zhu, X Xu, Y Wen… - … on Power Electronics, 2020 - ieeexplore.ieee.org
In this article, short-circuit capability prediction and failure mode of 1200-V-class SiC
MOSFETs with a double and asymmetric trench structure are proposed under single-pulse …

Investigation of off-state stress induced degradation of SiC MOSFETs under short-circuit condition

J Kang, Q Liu, H Luo, H Cao… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Investigation of silicon carbide (SiC) mosfet s short-circuit (SC) degradation mechanism is
critical to improve the overall reliability of power converters. At present, research on the SiC …

An In-Depth Investigation into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs

X Li, Y Wu, Z Qi, Z Fu, Y Chen, W Zhang… - … on Power Electronics, 2024 - ieeexplore.ieee.org
In this article, the short-circuit capability of 1200 V state-of-the-art silicon carbide (SiC) metal–
oxide–semiconductor field-effect transistor (mosfet) featuring reinforced double t rench …

Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement

I Almpanis, M Antoniou, P Evans… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
In recent years, silicon carbide (SiC) based devices are increasingly replacing their silicon
counterparts in power conversion applications due to their performance superiority. SiC …

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

R Yu, S Jahdi, O Alatise… - … on Device and …, 2023 - ieeexplore.ieee.org
The reliability of the SiC MOSFET has always been a factor hindering the device application,
especially under high voltage and high current conditions, such as in the short circuit events …

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2 kV SiC MOSFETs Across Multiple Vendors and Generations

S Makhdoom, N Ren, C Wang, C Lin, Y Wu… - IEEE …, 2024 - ieeexplore.ieee.org
Silicon Carbide (SiC) MOSFETs have gained significant attention in power electronics for
their superior characteristics. Despite advances in 1.2 kV SiC MOSFET generations, a …

[HTML][HTML] Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Y Zou, J Wang, H Xu, H Wang - Materials, 2022 - mdpi.com
In this paper, the short-circuit robustness of 1200 V silicon carbide (SiC) trench MOSFETs
with different gate structures has been investigated. The MOSFETs exhibited different failure …

Nondestructive and accurate prediction of IGBT junction temperature in wind power converters: based on IDMOA-ELM prediction method

L Jiaqi, L Li, Y Liu - Nondestructive Testing and Evaluation, 2024 - Taylor & Francis
This study has made significant advancements in predicting junction temperature of IGBTs in
wind power converters. An improved dwarf mongoose optimisation algorithm (IDMOA) with …