[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
A DFT study of electronic, optical and thermoelectric properties of Ge-halide perovskites CsGeX3 (X= F, Cl and Br)
In this paper, the structural, electronic, optical and thermoelectric properties of the inorganic
Ge-based halide perovskites CsGeX 3 (X= F, Cl; Br) have been investigated using density …
Ge-based halide perovskites CsGeX 3 (X= F, Cl; Br) have been investigated using density …
HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD
Precise control of the heteroepitaxy on a low-cost foreign substrate is often the key to drive
the success of fabricating semiconductor devices in scale when a large low-cost native …
the success of fabricating semiconductor devices in scale when a large low-cost native …
Strain-driven optical, electronic, and mechanical properties of inorganic halide perovskite CsGeBr3
Of late, inorganic perovskite material, especially the lead-free CsGeBr 3, has gained
considerable interest in the green photovoltaic industry due to its outstanding optoelectronic …
considerable interest in the green photovoltaic industry due to its outstanding optoelectronic …
[HTML][HTML] III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications
Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …
electromagnetic spectrum, making them a promising material system for various …
Deep-Ultraviolet Photodetection Using Single-Crystalline β-Ga2O3/NiO Heterojunctions
In recent years, β-Ga2O3/NiO heterojunction diodes have been studied, but reports in the
literature lack an investigation of an epitaxial growth process of high-quality single …
literature lack an investigation of an epitaxial growth process of high-quality single …
Identifying Carrier Behavior in Ultrathin Indirect‐Bandgap CsPbX3 Nanocrystal Films for Use in UV/Visible‐Blind High‐Energy Detectors
High‐energy radiation detectors such as X‐ray detectors with low light photoresponse
characteristics are used for several applications including, space, medical, and military …
characteristics are used for several applications including, space, medical, and military …
Study of new lead-free double perovskites halides Tl2TiX6 (X= Cl, Br, I) for solar cells and renewable energy devices
In recent years, lead-free double perovskites have been found tremendously advantageous
due to their unique optoelectronic and environmentally benign photovoltaic characteristics …
due to their unique optoelectronic and environmentally benign photovoltaic characteristics …
First principle study of optoelectronic and mechanical properties of lead-free double perovskites Cs2SeX6 (X = Cl, Br, I)
TI Al-Muhimeed, AI Aljameel, A Mera… - Journal of Taibah …, 2022 - Taylor & Francis
The variant double perovskites are considered novel materials for solar cells and
optoelectronic applications. Here, we explored electronic, mechanical, and optical …
optoelectronic applications. Here, we explored electronic, mechanical, and optical …
Valence and conduction band offsets of β-Ga2O3/AlN heterojunction
Both β-Ga 2 O 3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively.
We calculated the in-plane lattice mismatch between the (− 201) plane of β-Ga 2 O 3 and the …
We calculated the in-plane lattice mismatch between the (− 201) plane of β-Ga 2 O 3 and the …