In this article, a novel two-path model is proposed to quantitatively explain sub-threshold
characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials …

In this article, first, we show that by contact work function engineering, electrostatic doping
and proper scaling of both the oxide thickness and the flake thickness, high performance p …

Through the careful study of ionic liquid gated WSe2 Schottky barrier field-effect transistors
as a function of flake thickness referred to in the following as body thickness, t body …

In the past, failure to handle heat dissipation in the integrated circuits (ICs) employing
bipolar transistor technologies had forced the semiconductor industry to resort to …

Voltage scaling is an important factor in device miniaturization that leads to reduction in
power consumption. Tunnel field-effect transistors (TFETs) are attractive candidates to …

From their inception, two-dimensional (2D) van der Waals (vdW) layered materials, such as
graphene, hexagonal boron nitride (h-BN), and semiconducting transition metal …