Insulators for 2D nanoelectronics: the gap to bridge

YY Illarionov, T Knobloch, M Jech, M Lanza… - Nature …, 2020 - nature.com
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …

Hardware and information security primitives based on 2D materials and devices

A Wali, S Das - Advanced Materials, 2023 - Wiley Online Library
Hardware security is a major concern for the entire semiconductor ecosystem that accounts
for billions of dollars in annual losses. Similarly, information security is a critical need for the …

High-κ perovskite membranes as insulators for two-dimensional transistors

JK Huang, Y Wan, J Shi, J Zhang, Z Wang, W Wang… - Nature, 2022 - nature.com
The scaling of silicon metal–oxide–semiconductor field-effect transistors has followed
Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre …

[HTML][HTML] Temperature-dependent photoconductivity in two-dimensional MoS2 transistors

A Di Bartolomeo, A Kumar, O Durante, A Sessa… - Materials Today …, 2023 - Elsevier
The photoconductivity in monolayer MoS 2 back-gate transistors is studied as a function of
temperature and pressure. The photocurrent increases linearly with the light intensity up to a …

Electrical characterization of 2D materials-based field-effect transistors

SB Mitta, MS Choi, A Nipane, F Ali, C Kim… - 2D …, 2020 - iopscience.iop.org
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

T Knobloch, B Uzlu, YY Illarionov, Z Wang, M Otto… - Nature …, 2022 - nature.com
Electronic devices based on two-dimensional semiconductors suffer from limited electrical
stability because charge carriers originating from the semiconductors interact with defects in …

Artificial synapses based on multiterminal memtransistors for neuromorphic application

L Wang, W Liao, SL Wong, ZG Yu, S Li… - Advanced Functional …, 2019 - Wiley Online Library
Inspired by the human brain, neuromorphic computing on the hardware level is a data
processing model that could address the inherent energy and throughput limitations of …

Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

YY Illarionov, AG Banshchikov, DK Polyushkin… - Nature …, 2019 - nature.com
Two-dimensional semiconductors could be used to fabricate ultimately scaled field-effect
transistors and more-than-Moore nanoelectronic devices. However, these targets cannot be …

Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses

L Zhang, Z Liu, W Ai, J Chen, Z Lv, B Wang, M Yang… - Nature …, 2024 - nature.com
Integrating thin atomic-layer-deposited dielectrics with two-dimensional (2D)
semiconductors could be used to fabricate 2D transistors with sub-1 nm capacitance …

Pressure‐tunable ambipolar conduction and hysteresis in thin palladium diselenide field effect transistors

A Di Bartolomeo, A Pelella, X Liu, F Miao… - Advanced Functional …, 2019 - Wiley Online Library
Few‐layer palladium diselenide (PdSe2) field effect transistors are studied under external
stimuli such as electrical and optical fields, electron irradiation, and gas pressure. The …