Insulators for 2D nanoelectronics: the gap to bridge
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
Hardware and information security primitives based on 2D materials and devices
Hardware security is a major concern for the entire semiconductor ecosystem that accounts
for billions of dollars in annual losses. Similarly, information security is a critical need for the …
for billions of dollars in annual losses. Similarly, information security is a critical need for the …
High-κ perovskite membranes as insulators for two-dimensional transistors
The scaling of silicon metal–oxide–semiconductor field-effect transistors has followed
Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre …
Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre …
[HTML][HTML] Temperature-dependent photoconductivity in two-dimensional MoS2 transistors
The photoconductivity in monolayer MoS 2 back-gate transistors is studied as a function of
temperature and pressure. The photocurrent increases linearly with the light intensity up to a …
temperature and pressure. The photocurrent increases linearly with the light intensity up to a …
Electrical characterization of 2D materials-based field-effect transistors
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …
conventional semiconductor technologies face serious limitations in performance and power …
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
Electronic devices based on two-dimensional semiconductors suffer from limited electrical
stability because charge carriers originating from the semiconductors interact with defects in …
stability because charge carriers originating from the semiconductors interact with defects in …
Artificial synapses based on multiterminal memtransistors for neuromorphic application
Inspired by the human brain, neuromorphic computing on the hardware level is a data
processing model that could address the inherent energy and throughput limitations of …
processing model that could address the inherent energy and throughput limitations of …
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors
YY Illarionov, AG Banshchikov, DK Polyushkin… - Nature …, 2019 - nature.com
Two-dimensional semiconductors could be used to fabricate ultimately scaled field-effect
transistors and more-than-Moore nanoelectronic devices. However, these targets cannot be …
transistors and more-than-Moore nanoelectronic devices. However, these targets cannot be …
Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses
L Zhang, Z Liu, W Ai, J Chen, Z Lv, B Wang, M Yang… - Nature …, 2024 - nature.com
Integrating thin atomic-layer-deposited dielectrics with two-dimensional (2D)
semiconductors could be used to fabricate 2D transistors with sub-1 nm capacitance …
semiconductors could be used to fabricate 2D transistors with sub-1 nm capacitance …
Pressure‐tunable ambipolar conduction and hysteresis in thin palladium diselenide field effect transistors
Few‐layer palladium diselenide (PdSe2) field effect transistors are studied under external
stimuli such as electrical and optical fields, electron irradiation, and gas pressure. The …
stimuli such as electrical and optical fields, electron irradiation, and gas pressure. The …