Noise problem limits the sensitivity of magnetic tunnel junction (MTJ) sensors for ultra-low
magnetic field applications. Noise analysis not only helps in finding ways to eliminate noise …

This paper describes how magnetoresistive materials can be optimized and integrated in
magnetic field sensor devices. Giant magnetoresistive (GMR) and tunnel magnetoresistive …

Full Wheatstone bridge spin-valve-based electrical current sensors at the IC level are
presented. Prototypes with different geometrical parameters have been designed, fabricated …

Advanced sensing techniques are key technologies required for the smart grid. Magnetic
tunnel junction (MTJ) sensors hold great promises in the distributed linear current sensing …

We propose a new class of non-uniform superlattice magnetic tunnel junctions (Nu-SLTJs)
with the linear, Gaussian, Lorentzian, and Pöschl–Teller width and height based profiles …

A passive, non-contact piezoelectric microelectromechanical system sensor, aimed to
perform monitoring of electricity consumption in DC electrical appliances with current …

The performance of exchanged biased tunnel junctions strongly relies on the annealing
process finalizing the fabrication process, which is applied to set a pinned reference …

A cantilever-based oscillating type MEMS dc current sensor integrated with actuating and
sensing piezoelectric plates and a micromagnet was proposed for measuring electricity …

A passive field conversion–amplification scheme is proposed and demonstrated for the first
time by integrating a magnetic cantilever with a tunnel magnetoresistance (TMR) for current …

A cantilever‐based, oscillating type MEMS direct current sensor (abbreviated as DC sensor),
integrated with both actuating and sensing piezoelectric plates, as well as a micromagnet is …