Modulating the oxophilic properties of inorganic nanomaterials has become a powerful
approach to achieve high catalytic performance of electrocatalytic reaction in fuel cells. This …

For the first time, we report BEOL-compatible ferroelectric ternary content-addressable
memory (TCAM) based on amorphous IGZO (a-IGZO) channel and HfZrO 2 (HZO) …

We fabricated and characterized IGZO-channel back-gated FeFET. It has been found that a
Memory Window (MW) reading scheme based on reverse I_d-V_g sweep can strongly …

In this paper, we investigated the Fisk-Tait equation in interaction with an external magnetic
field in noncommutative space-time. Knowing that the space-time noncommutativity is …

Advances in epilepsy treatment are occurring at a rapid pace, and it is challenging for us to
keep up with the latest in our field. As we struggle to keep up with the literature and …

In this work, we report for the first time atomic-layer-deposited (ALD) all-oxide transistors
toward 3-D vertical integration, with thick ALD In 2 O 3 as gate electrodes, and In 2 O 3 itself …

We firstly demonstrate highly scalable interface type RRAM based 3D V-NAND memory with
WOx resistivity switching (RS) layer and IGZO selector transistor (Tr). 3D vertical interface …

In this work, we present and experimentally demonstrate the world's first back-end-of-line
(BEOL) compatible vertical ferroelectric NOR (FeNOR) memory. The key highlights of this …

For the first time, we report back-end-of-line (BEOL)-compatible 3D fin-gate oxide
semiconductor (OS) ferroelectric field-effect-transistors (Fe-FETs) featuring ALD-deposited …

We demonstrated a novel Ferroelectric Field-Effect Transistor (FeFET) with an IGZO
channel, featuring a record-high memory window (MW) of up to 17.8 V. A significant …