Surface morphology of polycrystalline silicon prepared by excimer laser annealing has been
investigated. It was found that when a thin amorphous Si film is irradiated by excimer laser …

A mathematical model of nonequilibrium phase change processes in amorphous silicon
induced by pulsed lasers, which includes explosive crystallization, melting, evaporation, and …

Time-resolved reflectivity and time-resolved conductivity spectroscopies have been used to
monitor phase changes as a function of pulse-energy density during the recrystallization of …

Pulsed laser absorption-mediated explosive crystallization of silicon films has extensively
been studied using microscopy techniques on single laser pulse-irradiated regions in the …

The kinetics of the crystallization process in amorphous hydrogenated Si (a-Si: H) thin films
induced by XeCl and ArF excimer laser pulses has been studied both experimentally and …

Publisher Summary This chapter introduces the basic theory of laser-induced phase-change
processes, with particular attention to amorphous silicon (a-Si) and a-Si-based binary …

The field of laser crystallization and laser annealing has its origin in the late 1970s. The
utilization of lasers as a direct energy source was considered advantageous since the time …

Обработка тонких пленок гидрогенизированного аморфного кремния (a-Si: H)
излучением эксимерных лазеров является привлекательным методом в технологии …

We extend the theoretical model of recrystallization of a-Si films induced by pulsed laser
irradiation and determine c-Si cluster distribution in the solid phase and we discuss the …