Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology
ZI Alferov - Reviews of modern physics, 2001 - APS
It is impossible to imagine now modern solid-state physics without semiconductor
heterostructures. Semiconductor heterostructures and, particularly, double heterostructures …
heterostructures. Semiconductor heterostructures and, particularly, double heterostructures …
GaAs-based long-wavelength lasers
VM Ustinov, AE Zhukov - Semiconductor science and technology, 2000 - iopscience.iop.org
The present paper reviews recent achievements in the fabrication of diode lasers for the
near-infrared range on GaAs substrates. 1.3 µm light emitters are currently widely used in …
near-infrared range on GaAs substrates. 1.3 µm light emitters are currently widely used in …
[图书][B] Dekker encyclopedia of nanoscience and nanotechnology
JA Schwarz, CI Contescu, K Putyera - 2004 - books.google.com
Nanoscience encompasses all scientific phenomena that transpire in dimensions spanning
the range of multiple atom clusters, molecular aggregates, supermolecular structures …
the range of multiple atom clusters, molecular aggregates, supermolecular structures …
Quantum-dot heterostructure lasers
NN Ledentsov, M Grundmann… - IEEE Journal of …, 2000 - ieeexplore.ieee.org
Quantum-dot (QD) heterostructures are nanoscale coherent insertions of narrow-gap
material in a single-crystalline matrix. These tiny structures provide unique opportunities to …
material in a single-crystalline matrix. These tiny structures provide unique opportunities to …
Temperature dependence of the optical properties of self-organized quantum dots
The photoluminescence properties of I n A s/A ly Ga 1− y As self-assembled quantum dots
are studied as a function of temperature from 10 to 290 K. By varying the Al content the dot …
are studied as a function of temperature from 10 to 290 K. By varying the Al content the dot …
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers
By measuring the spontaneous emission (SE) from normally operating/spl sim/1.3-/spl mu/m
GaInNAs-GaAs-based lasers we have quantitatively determined the variation of each of the …
GaInNAs-GaAs-based lasers we have quantitatively determined the variation of each of the …
Double heterostructure lasers: early days and future perspectives
Z Alferov - IEEE Journal of Selected Topics in Quantum …, 2000 - ieeexplore.ieee.org
A short historical review of the physics and technology of heterostructure lasers based on
double heterostructures is described. Recent progress in quantum dot laser structures and …
double heterostructures is described. Recent progress in quantum dot laser structures and …
Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
AE Zhukov, AR Kovsh, NA Maleev, SS Mikhrin… - Applied physics …, 1999 - pubs.aip.org
An InAs quantum dot (QD) array covered by a thin InGaAs layer was used as the active
region of diode lasers grown by molecular beam epitaxy on GaAs substrates. The …
region of diode lasers grown by molecular beam epitaxy on GaAs substrates. The …
[图书][B] Quantum Confined Laser Devices: Optical gain and recombination in semiconductors
P Blood - 2015 - books.google.com
The semiconductor laser, invented over 50 years ago, has had an enormous impact on the
digital technologies that now dominate so many applications in business, commerce and the …
digital technologies that now dominate so many applications in business, commerce and the …
Temperature dependence of gain saturation in multilevel quantum dot lasers
G Park, OB Shchekin, DG Deppe - IEEE journal of quantum …, 2000 - ieeexplore.ieee.org
The temperature dependence of quantum dot (QD) optical gain is analyzed using a
multilevel model and compared with experiment. The maximum gain is found to have a …
multilevel model and compared with experiment. The maximum gain is found to have a …