Effect of channel & gate engineering on Double Gate (DG) MOSFET-A Comparative Study
SK Mohapatra, KP Pradhan… - … Conference on Emerging …, 2012 - ieeexplore.ieee.org
Present work is the comparative study on the performance of Double Gate (DG) Metal Oxide
Semiconductor Field Effect Transistor (MOSFET) with different channel and gate …
Semiconductor Field Effect Transistor (MOSFET) with different channel and gate …
Performance enhancement and reduction of short channel effects of nano-MOSFET by using graded channel engineering
S Panigrahy, PK Sahu - 2013 International Conference on …, 2013 - ieeexplore.ieee.org
The effect of the structure on electrical parameters of short channel Double-Gate Metal-
Oxide-Semiconductor Field-Effect Transistors (DG MOSFETs) has been explored. To …
Oxide-Semiconductor Field-Effect Transistors (DG MOSFETs) has been explored. To …
Role of high-k materials in Nanoscale TM-DG MOSFET: A simulation study
Triple Material (TM) Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor
(MOSFET) with high-k dielectric material as Gate Stack (GS) is presented in this paper. The …
(MOSFET) with high-k dielectric material as Gate Stack (GS) is presented in this paper. The …
A New Nanoscale DG MOSFET Design with Enhanced Performance–A Comparative Study
Abstract Triple Material (TM) Double Gate (DG) Metal Oxide Semiconductor Field Effect
Transistor (MOSFET) with high-k dielectric material as Gate Stack (GS) is presented in this …
Transistor (MOSFET) with high-k dielectric material as Gate Stack (GS) is presented in this …
[PDF][PDF] ANALYSIS OF REDUCING SHORT CHANNEL EFFECT
A Singh, S Prajapati, SK Chaurasia - Organized by, 2017 - researchgate.net
In this we have analyzed the different methods to reduce the short channel effects. Short
channel effects include gate sub threshold swing and threshold voltage, DIBL (drain induced …
channel effects include gate sub threshold swing and threshold voltage, DIBL (drain induced …