Characterization and optimization of junctionless gate-all-around vertically stacked nanowire FETs for sub-5 nm technology nodes
VB Sreenivasulu, V Narendar - Microelectronics Journal, 2021 - Elsevier
In this paper, for the first time, we have investigated the DC, analog/RF, and linearity metrics
of asymmetric spacer junctionless (JL) Gate-All-Around (GAA) vertically stacked nanowire …
of asymmetric spacer junctionless (JL) Gate-All-Around (GAA) vertically stacked nanowire …
Design and temperature assessment of junctionless nanosheet FET for nanoscale applications
VB Sreenivasulu, V Narendar - Silicon, 2022 - Springer
Nanosheets are the revolutionary change to overcome the limitations of FinFET. In this
paper, the temperature dependence of 10 nm junctionless (JL) nanosheet FET performance …
paper, the temperature dependence of 10 nm junctionless (JL) nanosheet FET performance …
Study of analog performance of common source amplifier using rectangular core–shell based double gate junctionless transistor
A new state of the art double gate junctionless transistor (DGJLT) namely the rectangular
core–shell DGJLT (RCS-DGJLT) based common source amplifier circuit is designed to …
core–shell DGJLT (RCS-DGJLT) based common source amplifier circuit is designed to …
Design and performance analysis of proposed biosensor based on double gate junctionless transistor
In this paper, the label free detection of neutral and charged biomolecules with the potential
capability of dielectric modulated double gate junctionless metal oxide semiconductor field …
capability of dielectric modulated double gate junctionless metal oxide semiconductor field …
Correlation of core thickness and core doping with gate & spacer dielectric in rectangular core shell double gate junctionless transistor
The impression of gate dielectric and spacer dielectric on the performance of rectangular
core shell double gate junctionless transistor (RCS-DGJLT) using extensive simulations is …
core shell double gate junctionless transistor (RCS-DGJLT) using extensive simulations is …
Performance analysis of multi-channel-multi-gate-based junctionless field effect transistor
In this paper, a multi-gate junctionless field-effect transistor with a quad gate and multiple
channels has been proposed and thoroughly simulated. The proposed device offers a lower …
channels has been proposed and thoroughly simulated. The proposed device offers a lower …
Impact of core thickness and gate misalignment on rectangular core–shell based double gate junctionless field effect transistor
A rectangular core is inserted in double gate junctionless transistor (DGJLT) which
separates the top shell and bottom shell in the device called as rectangular core–shell …
separates the top shell and bottom shell in the device called as rectangular core–shell …
Doping engineering to enhance the performance of a rectangular core shell double gate junctionless field effect transistor
This paper describes different architectures of a rectangular core shell double gate
junctionless field effect transistor (RCS-DGJLT). The device performance has been studied …
junctionless field effect transistor (RCS-DGJLT). The device performance has been studied …
Performance enhancement of GAA multi-gate nanowire with asymmetric hetero-dielectric oxide
In this paper, a Multi-gate asymmetric hetero-dielectric oxide gate all around nanowire
MOSFET device (MG-AHD–GAA-NW) is proposed for the low power standby, memory and …
MOSFET device (MG-AHD–GAA-NW) is proposed for the low power standby, memory and …
Modeling threshold voltage and drain-induced barrier lowering effect of opposite doping core–shell channel surrounding-gate junctionless MOSFET
L Xu, G Wu, P Li, T Cheng - Microelectronics Journal, 2023 - Elsevier
For the sake of promoting core–shell channel (CSC) junctionless (JL) MOSFET, this paper
models opposite doping core–shell channel (ODCSC) surrounding-gate (SG) JL MOSFET …
models opposite doping core–shell channel (ODCSC) surrounding-gate (SG) JL MOSFET …