Silicon carbide (SiC) power devices have been investigated extensively in the past two
decades, and there are many devices commercially available now. Owing to the intrinsic …

Due to much higher achievable blocking voltage and faster switching speed, power devices
based on wide bandgap (WBG) silicon carbide (SiC) material are ideal for medium voltage …

This chapter intends to provide a comprehensive and comparative discussion of various
important power device technologies which are critical for industrial, smart grid and …

The electric power supply system is one of the most important research areas within
sustainable and energy-efficient aviation for more-and especially all electric aircraft. This …

The most important impact of power electronics on our society in the last 50 years has been
the elimination of the 60-Hz ac power delivery system for consumer electronic products …

Due to wider band gap of silicon carbide (SiC) compared to silicon (Si), MOSFET made in
SiC has considerably lower drift region resistance, which is a significant resistive component …

Power electronic systems have a great impact on modern society. Their applications target a
more sustainable future by minimizing the negative impacts of industrialization on the …

The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10
kV is expected to revolutionize medium-and high-voltage systems. However, present power …

This paper proposes a novel two-level single-stage direct ac-ac converter for realizing a 7.2-
kV medium-voltage (MV) solid-state transformer (SST) based on 15-kV SiC mosfets. A new …

The 15-kV silicon carbide (SiC) MOSFET and 15-kV SiC IGBT are the two state-of-the-art
high-voltage SiC devices. These high-voltage SiC devices enable simple two-level …