Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review
In this paper we summarize the impact of Statistical Variability (SV) on device performances
and study the impact of oxide trapped charges in combination with SV. Traps time constants …
and study the impact of oxide trapped charges in combination with SV. Traps time constants …
An adaptive multilevel Monte Carlo algorithm for the stochastic drift–diffusion–Poisson system
We present an adaptive multilevel Monte Carlo algorithm for solving the stochastic drift–
diffusion–Poisson system with non-zero recombination rate. The a-posteriori error is …
diffusion–Poisson system with non-zero recombination rate. The a-posteriori error is …
Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology
L Gerrer, SM Amoroso, P Asenov, J Ding… - 2013 IEEE …, 2013 - ieeexplore.ieee.org
In this paper we present a reliability simulation framework from atomistic simulations up to
circuit simulations, including traps interactions with variability sources. Trapping and …
circuit simulations, including traps interactions with variability sources. Trapping and …
3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET
New transistor architectures such as fully depleted silicon on insulator (FDSoI) MOSFETs
and FinFETs have been introduced in advanced CMOS technology generations to boost …
and FinFETs have been introduced in advanced CMOS technology generations to boost …
Impact of Process-Induced Inclined Side-Walls on Gate Leakage Current of Nanowire GAA MOSFETs
In this work, the influence of process-induced sidewall inclination on direct tunneling gate
leakage current () in the trapezoidal (Tz) channel NW GAA MOSFETs has been …
leakage current () in the trapezoidal (Tz) channel NW GAA MOSFETs has been …
Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale flash memories
This paper presents a detailed simulation investigation of the impact of statistical variability
and 3D electrostatics on SILC distribution in nanoscale Flash memories. Considering a 1 …
and 3D electrostatics on SILC distribution in nanoscale Flash memories. Considering a 1 …
Statistical Study of Bias Temperature Instabilities by Means of 3D “Atomistic” Simulation
This chapter presents a comprehensive simulation study of the reliability performance in
contemporary bulk MOSFET devices. With the CMOS technology entering in the nanoscale …
contemporary bulk MOSFET devices. With the CMOS technology entering in the nanoscale …
[PDF][PDF] Time domain simulation of statistical variability and oxide degradation including trapping/detrapping dynamics
We present a unified modelling framework for the simulation of time-dependent statistical
variability resulting from the dynamics of oxide traps. Given that trap dynamics underlie the …
variability resulting from the dynamics of oxide traps. Given that trap dynamics underlie the …
[图书][B] Design of Ultra-Compact and Low-Power sub-10 Nanometer Logic Circuits with Schottky Barrier Contacts and Gate Work-Function Engineering
TF Canan - 2022 - search.proquest.com
Abstract As modern Complementary Semiconductor Metal Oxide (CMOS) technology is
approaching to the end of scaling limits projected by Moore's Law, researchers are in a …
approaching to the end of scaling limits projected by Moore's Law, researchers are in a …
Computational and analytical methods for the simulation of electronic states and transport in semiconductor systems.
JA Barrett - 2023 - aru.figshare.com
AbstractThe work in this thesis is focussed on obtaining fast, efficient solutions to the
Schroedinger-Poisson model of electron states in microelectronic devices. The self …
Schroedinger-Poisson model of electron states in microelectronic devices. The self …