Gate-controlled quantum dots and superconductivity in planar germanium

NW Hendrickx, DP Franke, A Sammak… - Nature …, 2018 - nature.com
Superconductors and semiconductors are crucial platforms in the field of quantum
computing. They can be combined to hybrids, bringing together physical properties that …

Recent progress on Ge/SiGe quantum well optical modulators, detectors, and emitters for optical interconnects

P Chaisakul, V Vakarin, J Frigerio, D Chrastina, G Isella… - Photonics, 2019 - mdpi.com
Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …

On-chip infrared photonics with Si-Ge-heterostructures: What is next?

IA Fischer, M Brehm, M De Seta, G Isella, DJ Paul… - APL Photonics, 2022 - pubs.aip.org
The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …

Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions

T Grange, D Stark, G Scalari, J Faist… - Applied Physics …, 2019 - pubs.aip.org
n-type Ge/SiGe terahertz quantum cascade lasers are investigated using non-equilibrium
Green's functions calculations. We compare the temperature dependence of the terahertz …

Radiative recombination and optical gain spectra in biaxially strained -type germanium

M Virgilio, CL Manganelli, G Grosso, G Pizzi… - Physical Review B …, 2013 - APS
We calculate band-to-band radiative transition rate spectra in pure Ge as functions of
applied tensile strain, heavy doping, charge injection density, and temperature. Direct and …

High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz

E Campagna, E Talamas Simola, T Venanzi… - …, 2024 - degruyter.com
A parabolic potential that confines charge carriers along the growth direction of quantum
wells semiconductor systems is characterized by a single resonance frequency, associated …

Control of Electron-State Coupling in Asymmetric Quantum Wells

C Ciano, M Virgilio, M Montanari, L Persichetti… - Physical Review …, 2019 - APS
Theoretical predictions indicate that the n-type Ge/Si-Ge multi-quantum-well system is the
most promising material for the realization of a Si-compatible THz quantum cascade laser …

Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study

E Talamas Simola, M Ortolani, L Di Gaspare… - …, 2024 - degruyter.com
We present a theoretical investigation of guided second harmonic generation at THz
frequencies in SiGe waveguides embedding n-type Ge/SiGe asymmetric coupled quantum …

Ultrastrong Coupling of Si1–xGex Parabolic Quantum Wells to Terahertz Microcavities

F Berkmann, T Venanzi, L Baldassarre… - ACS …, 2024 - ACS Publications
Control and manipulation of quantum states by light are increasingly important for both
fundamental research and applications. This can be achieved through the strong coupling …

Thin SiGe virtual substrates for Ge heterostructures integration on silicon

S Cecchi, E Gatti, D Chrastina, J Frigerio… - Journal of Applied …, 2014 - pubs.aip.org
The possibility to reduce the thickness of the SiGe virtual substrate, required for the
integration of Ge heterostructures on Si, without heavily affecting the crystal quality is …