Gate-controlled quantum dots and superconductivity in planar germanium
Superconductors and semiconductors are crucial platforms in the field of quantum
computing. They can be combined to hybrids, bringing together physical properties that …
computing. They can be combined to hybrids, bringing together physical properties that …
Recent progress on Ge/SiGe quantum well optical modulators, detectors, and emitters for optical interconnects
Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …
the realization of Si-based optical modulators, photodetectors, and light emitters for short …
On-chip infrared photonics with Si-Ge-heterostructures: What is next?
The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
n-type Ge/SiGe terahertz quantum cascade lasers are investigated using non-equilibrium
Green's functions calculations. We compare the temperature dependence of the terahertz …
Green's functions calculations. We compare the temperature dependence of the terahertz …
Radiative recombination and optical gain spectra in biaxially strained -type germanium
We calculate band-to-band radiative transition rate spectra in pure Ge as functions of
applied tensile strain, heavy doping, charge injection density, and temperature. Direct and …
applied tensile strain, heavy doping, charge injection density, and temperature. Direct and …
High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz
E Campagna, E Talamas Simola, T Venanzi… - …, 2024 - degruyter.com
A parabolic potential that confines charge carriers along the growth direction of quantum
wells semiconductor systems is characterized by a single resonance frequency, associated …
wells semiconductor systems is characterized by a single resonance frequency, associated …
Control of Electron-State Coupling in Asymmetric Quantum Wells
Theoretical predictions indicate that the n-type Ge/Si-Ge multi-quantum-well system is the
most promising material for the realization of a Si-compatible THz quantum cascade laser …
most promising material for the realization of a Si-compatible THz quantum cascade laser …
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study
E Talamas Simola, M Ortolani, L Di Gaspare… - …, 2024 - degruyter.com
We present a theoretical investigation of guided second harmonic generation at THz
frequencies in SiGe waveguides embedding n-type Ge/SiGe asymmetric coupled quantum …
frequencies in SiGe waveguides embedding n-type Ge/SiGe asymmetric coupled quantum …
Ultrastrong Coupling of Si1–xGex Parabolic Quantum Wells to Terahertz Microcavities
F Berkmann, T Venanzi, L Baldassarre… - ACS …, 2024 - ACS Publications
Control and manipulation of quantum states by light are increasingly important for both
fundamental research and applications. This can be achieved through the strong coupling …
fundamental research and applications. This can be achieved through the strong coupling …
Thin SiGe virtual substrates for Ge heterostructures integration on silicon
The possibility to reduce the thickness of the SiGe virtual substrate, required for the
integration of Ge heterostructures on Si, without heavily affecting the crystal quality is …
integration of Ge heterostructures on Si, without heavily affecting the crystal quality is …