This article focuses on providing the laminated busbar design guidance for a three-level T-
type neutral-pointclamped (3L-TNPC) inverter to achieve low stray inductance and balanced …

This article addresses the influence of parameters spread on transient current distribution
among parallel-connected silicon carbide (SiC) mosfets and proposes a chips classification …

Device parameter mismatch generates current imbalance between parallel devices. In
severe cases, the device that withstands excessive current may incur overcurrent failure …

This paper describes the development of a machine learning model which can be used to
screen SiC MOSFETs for paralleling with minimized transient current imbalance. The spread …

Due to material defects and immature process technology, the current level of SiC MOSFET
is significantly lower than that of Si IGBT. Connecting multiple chips in parallel has become a …

In bridge-leg configurations, spurious gate-source voltages (crosstalk voltages) can falsely
trigger one switch to turn ON at the complementary switch's turn-ON interval. Previous works …

Silicon-Carbide (SiC) MOSFETs have gained significant adoption in power converters due
to their superior performance over their Silicon counterparts. Active gate drivers (AGDs) are …

Research teams from industry and academia have highlighted the advantages obtained
from the introduction of Silicon Carbide (SiC) traction inverter power modules. Similarly …

This paper comprehensively investigates the current distribution behaviours of paralleled
SiC MOSFET devices under the parasitic coupling between gate and power loops. Three …

This paper describes a simple carrier-based approach for developing and evaluating some
of the key performance characteristics of a multi-level inverters. Three types of carrier-based …