[图书][B] Symbolic analysis for automated design of analog integrated circuits
G Gielen, WMC Sansen - 2012 - books.google.com
It is a great honor to provide a few words of introduction for Dr. Georges Gielen's and Prof.
Willy Sansen's book" Symbolic analysis for automated design of analog integrated circuits" …
Willy Sansen's book" Symbolic analysis for automated design of analog integrated circuits" …
Nonlinear programming without computation
L Chua, GN Lin - IEEE Transactions on Circuits and Systems, 1984 - ieeexplore.ieee.org
Using the Kuhn-Tucker conditions from mathematical programming theory, a canonical
nonlinear programming circuit for simulating general nonlinear programming problems has …
nonlinear programming circuit for simulating general nonlinear programming problems has …
Nonlinear transformer model for circuit simulation
JH Chan, A Vladimirescu, XC Gao… - … on Computer-Aided …, 1991 - ieeexplore.ieee.org
A transformer model which consists of a nonlinear core with hysteresis and multiple
windings is described as implemented in DSPICE. In contrast to previous implementations …
windings is described as implemented in DSPICE. In contrast to previous implementations …
Failures induced on analog integrated circuits by conveyed electromagnetic interferences: A review
G Masetti, S Graffi, D Golzio, ZM Kovács-V - Microelectronics Reliability, 1996 - Elsevier
Failures induced on analog integrated circuits by electromagnetic interference (EMI) will be
analyzed with particular emphasis on integrated operational amplifiers built with different …
analyzed with particular emphasis on integrated operational amplifiers built with different …
The effect of logic block architecture on FPGA performance
This authors explore the effect of logic block architecture on the speed of a field-
programmable gate array (FPGA). Four classes of logic block architecture are investigated …
programmable gate array (FPGA). Four classes of logic block architecture are investigated …
Measurement of electron lifetime, electron mobility and band-gap narrowing in heavily doped p-type silicon
SE Swirhun, YH Kwark… - … Electron Devices Meeting, 1986 - ieeexplore.ieee.org
The parameters that control the transport of minority carriers in heavily doped Si: B have
been measured by a combination of steady state electrical and transient optical techniques …
been measured by a combination of steady state electrical and transient optical techniques …
Negative resistance devices
Two‐terminal devices which exhibit a type‐S (current‐controlled) or type‐N (voltage‐
controlled) negative differential resistance can be built using only two bipolar transistors and …
controlled) negative differential resistance can be built using only two bipolar transistors and …
[图书][B] Charge-based modeling of capacitance in MOS transistors
DE Ward - 1981 - search.proquest.com
Conventional transistor models for the transient simulation of MOS circuits are formulated in
terms of nonlinear capacitors. The numerical integration of these capacitances by the …
terms of nonlinear capacitors. The numerical integration of these capacitances by the …
Computation of electromagnetic transients using dual or multiple time steps
A Semlyen, F De Leon - IEEE Transactions on Power Systems, 1993 - ieeexplore.ieee.org
When computing transients with the EMTP (electromagnetic transients program) a single
time step is selected for the trapezoidal integration all over the system. When this step is …
time step is selected for the trapezoidal integration all over the system. When this step is …