Advances in logic locking: Past, present, and prospects

HM Kamali, KZ Azar, F Farahmandi… - Cryptology ePrint …, 2022 - eprint.iacr.org
Logic locking is a design concealment mechanism for protecting the IPs integrated into
modern System-on-Chip (SoC) architectures from a wide range of hardware security threats …

1D and 2D field effect transistors in gas sensing: A comprehensive review

A Paghi, S Mariani, G Barillaro - Small, 2023 - Wiley Online Library
Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials
have solicited the incorporation of these nanomaterials into sensor architectures, especially …

Junctionless tunnel field effect transistor

B Ghosh, MW Akram - IEEE electron device letters, 2013 - ieeexplore.ieee.org
In this letter, a double-gate junctionless tunnel field effect transistor (JL-TFET) is proposed
and investigated. The JL-TFET is a Si-channel heavily n-type-doped junctionless field effect …

Comparison of Junctionless and Conventional Trigate Transistors With Down to 26 nm

R Rios, A Cappellani, M Armstrong… - IEEE electron device …, 2011 - ieeexplore.ieee.org
Junctionless accumulation-mode (JAM) devices with channel lengths L_g down to 26 nm
were fabricated on a trigate process and compared to conventional inversion-mode (IM) …

Sensitivity of threshold voltage to nanowire width variation in junctionless transistors

SJ Choi, DI Moon, S Kim, JP Duarte… - IEEE Electron Device …, 2010 - ieeexplore.ieee.org
We experimentally investigate the sensitivity of threshold voltage (T) to the variation of
silicon nanowire (SiNW) width (W si) in gate-all-around junctionless transistors by …

Junctionless multiple-gate transistors for analog applications

RT Doria, MA Pavanello, RD Trevisoli… - … on Electron Devices, 2011 - ieeexplore.ieee.org
This paper presents the evaluation of the analog properties of nMOS junctionless (JL)
multigate transistors, comparing their performance with those exhibited by inversion-mode …

Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights

M Halter, L Bégon-Lours, V Bragaglia… - … applied materials & …, 2020 - ACS Publications
Neuromorphic computing architectures enable the dense colocation of memory and
processing elements within a single circuit. This colocation removes the communication …

Effect of band-to-band tunneling on junctionless transistors

S Gundapaneni, M Bajaj, RK Pandey… - … on Electron Devices, 2012 - ieeexplore.ieee.org
We evaluate the impact of band-to-band tunneling (BTBT) on the characteristics of n-
channel junctionless transistors (JLTs). A JLT that has a heavily doped channel, which is …

Bulk planar junctionless transistor (BPJLT): An attractive device alternative for scaling

S Gundapaneni, S Ganguly… - IEEE Electron device …, 2011 - ieeexplore.ieee.org
We propose a novel highly scalable source-drain-junction-free field-effect transistor that we
call the bulk planar junctionless transistor (BPJLT). This builds upon the idea of an isolated …

Low-frequency noise in multilayer MoS 2 field-effect transistors: the effect of high-k passivation

J Na, MK Joo, M Shin, J Huh, JS Kim, M Piao, JE Jin… - Nanoscale, 2014 - pubs.rsc.org
Diagnosing of the interface quality and the interactions between insulators and
semiconductors is significant to achieve the high performance of nanodevices. Herein, low …