We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure
grown by metal–organic chemical vapor deposition on a silicon (111) substrate using a total …

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–
insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high …

We report a three‐terminal breakdown voltage over 3 kV on AlGaN/GaN high electron
mobility transistors (HEMTs) grown on 6‐in. silicon (111) substrate with a buffer thickness of …

Silicon photonics has been longing for an efficient on-chip light source that is electrically
driven at room temperature. Microdisk laser featured with low-loss whispering gallery modes …

III-nitrides based microdisks with the mushroom-type shape are key components for
integrated nanophotonic circuits. The air gap undercut in the mushroom-type microdisk is …

Silicon photonics has been calling for an electrically pumped on-chip light source at room
temperature for decades. A GaN-based microdisk laser diode with whispering gallery modes …

A three‐terminal breakdown voltage over 3 kV is reported on AlGaN/GaN high‐electron‐
mobility transistors (HEMTs) grown on silicon (Si)(111) substrate with a buffer thickness of …

We report on the demonstration of low trapping effects above 1200 V of GaN-on-silicon
transistors using a local substrate removal (LSR) followed by a thick backside ultra-wide …

A combined deep‐level transient spectroscopy (DLTS) and electron spin resonance (ESR)
study is performed to identify the electrically active defects at the AlN/Si (111) interface. It is …

This paper details the fabrication of GaN-based microdisks with a single porous n-GaN layer
positioned beneath the multiple quantum wells region on a modified green light-emitting …