New dual material double gate junctionless tunnel FET: Subthreshold modeling and simulation
GL Priya, NB Balamurugan - AEU-International Journal of Electronics and …, 2019 - Elsevier
A subthreshold analytical model for Dual Material Double Gate Junctionless Tunnel FET
(DMDG JLTFET) is developed. To analyze the behavior of short channel device, relevant …
(DMDG JLTFET) is developed. To analyze the behavior of short channel device, relevant …
A holistic approach on Junctionless dual material double gate (DMDG) MOSFET with high k gate stack for low power digital applications
S Darwin, TS Arun Samuel - silicon, 2020 - Springer
The 2D analytical models for electrostatic potential, threshold voltage, subthreshold swing,
Drain Induced Barrier Lowering (DIBL) and drain current of the Dual Material Double Gate …
Drain Induced Barrier Lowering (DIBL) and drain current of the Dual Material Double Gate …
Reliability analysis of junction-less double gate (JLDG) MOSFET for analog/RF circuits for high linearity applications
S Rai - Microelectronics journal, 2017 - Elsevier
Junctionless double gate (JLDG) MOSFET in sub nano meter regime has been the preferred
choice for researchers as the leakage current in a JLDG MOSFET is significantly less …
choice for researchers as the leakage current in a JLDG MOSFET is significantly less …
Dual-metal double-gate with low-k/high-k oxide stack junctionless MOSFET for a wide range of protein detection: a fully electrostatic based numerical approach
A Chattopadhyay, S Tewari, PS Gupta - Silicon, 2021 - Springer
We investigate the performance of a dielectric modulated dual-metal double-gate with low-
k/high-k oxide stack junctionless MOSFET (DM-DG-LK/HK-S JL-MOSFET) based sensor …
k/high-k oxide stack junctionless MOSFET (DM-DG-LK/HK-S JL-MOSFET) based sensor …
An analytical model of triple‐material double‐gate metal–oxide–semiconductor field‐effect transistor to suppress short‐channel effects
This paper presents an analytical subthreshold model for surface potential and threshold
voltage of a triple‐material double‐gate (DG) metal–oxide–semiconductor field‐effect …
voltage of a triple‐material double‐gate (DG) metal–oxide–semiconductor field‐effect …
Analytical modeling of subthreshold characteristics of ultra-thin double gate-all-around (DGAA) MOSFETs incorporating quantum confinement effects
In this work, analytical models of subthreshold current and subthreshold swing of short
channel ultra-thin double gate-all-around (DGAA) MOSFETs including quantum confinement …
channel ultra-thin double gate-all-around (DGAA) MOSFETs including quantum confinement …
[PDF][PDF] Performance and a new 2-D analytical modeling of a dual-halo dual-dielectric triple-material surrounding-gate-all-around (DH-DD-TM-SGAA) MOSFET
This proposed work covers the effect of dual halo structure with dual dielectric. A 2-D
analytical model for potential distribution, threshold voltage, electric field and sub-threshold …
analytical model for potential distribution, threshold voltage, electric field and sub-threshold …
A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs
PS Dhanaselvam, NB Balamurugan… - Microelectronics …, 2013 - Elsevier
A 2D analytical model for transconductance, Sub-threshold current and Sub-threshold swing
for Triple Material Surrounding Gate MOSFET (TMSG) is presented in this paper. Based on …
for Triple Material Surrounding Gate MOSFET (TMSG) is presented in this paper. Based on …
Improvement of subthreshold characteristics of dopingless tunnel FET using hetero gate dielectric material: analytical modeling and simulation
B NB - Silicon, 2020 - Springer
An improved subthreshold analytical model of Dual Material Double Gate Junctionless
Tunnel FET (DMDG JLTFET) with stacked/hetero-dielectric gate oxide structure is proposed …
Tunnel FET (DMDG JLTFET) with stacked/hetero-dielectric gate oxide structure is proposed …
A novel technique to investigate the impact of temperature and process parameters on electrostatic and analog/RF performance of channel modulated junctionless …
The channel modulated junctionless gate all around (CM-JL-GAA) MOSFET improves the
SCE's with high graded doping of the channel region. Temperature effects on electrostatic …
SCE's with high graded doping of the channel region. Temperature effects on electrostatic …