Single and dual strained channel analysis of vertical strained—SiGe impact ionization MOSFET (VESIMOS)
Single Channel (SC) and Dual Channel (DC) Vertical Strained-SiGe Impact Ionization
MOSFET (VESIMOS) has been successfully simulated and analyzed in this paper. Found …
MOSFET (VESIMOS) has been successfully simulated and analyzed in this paper. Found …
Breakdown Voltage Reduction Analysis with Adopting Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS).
I Saad, C Bun Seng, H Mohd Zuhir… - … Systems, Science & …, 2014 - search.ebscohost.com
Abstract The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium
(SiGe) Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this …
(SiGe) Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this …
Impact of strain and DP position on the performance of Vertical Strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)
The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric
Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. The …
Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. The …
The vertical strained impact ionization MOSFET (VESIMOS) for ultra-sensitive biosensor application
This paper venture into prospective ideas of finding the best feasible candidates for future
bio-based sensor by exploring an emerging device structure with elevated performance and …
bio-based sensor by exploring an emerging device structure with elevated performance and …
Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS)
In this work, single and dual channel SiGe layer for Vertical Strained Silicon Germanium
(SiGe) Impact Ionization MOSFET (VESIMOS) has been successfully analyzed. Presence of …
(SiGe) Impact Ionization MOSFET (VESIMOS) has been successfully analyzed. Presence of …
Mitigating Breakdown Voltage with Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS)
The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium (SiGe)
Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this paper. It is …
Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this paper. It is …
Equivalent circuit modeling of dual channel vertical strained SiGe impact ionization MOSFET (DC-VESIMOS)
The dual channel of VESIMOS (DC-VESIMOS) have been analyzed using the Silvaco TCAD
tools whereas the equivalent circuit modeling of DC-VESIMOS have been analyzed using …
tools whereas the equivalent circuit modeling of DC-VESIMOS have been analyzed using …
Physics-based modelling of vertical strained impact ionization MOSFET (VESIMOS)
CMOS device scaling faces several fundamental limits as it scaled beyond the sub-30nm
regime. Non-scalability of the subthreshold slope (S) and adverse short channel effects …
regime. Non-scalability of the subthreshold slope (S) and adverse short channel effects …
Effect of the Ge Mole Fraction on the Electrical Characteristics of Single and Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS)
The effect of the Ge mole fraction in a Si1-xGex on single and dual channel Vertical Strained
SiGe Impact Ionization MOSFET was successfully analyzed. It is found that the threshold …
SiGe Impact Ionization MOSFET was successfully analyzed. It is found that the threshold …
The effects of drain scatterings on the electron transport properties of strained-Si diodes with ballistic and non-ballistic channels
G Yasenjan, G Mamtimin, M Mamatrishat… - Journal of …, 2015 - iopscience.iop.org
The effects of multiple scattering on the electron transport properties in drain regions are
numerically investigated for the cases of strained-Si diodes with or without scattering in the …
numerically investigated for the cases of strained-Si diodes with or without scattering in the …