Positive Bias Temperature Instability in SiC-Based Power MOSFETs
V Volosov, S Bevilacqua, L Anoldo, G Tosto, E Fontana… - Micromachines, 2024 - mdpi.com
This paper investigates the threshold voltage shift (ΔVTH) induced by positive bias
temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔVTH …
temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔVTH …
Oxide and Interface Defect Analysis of Lateral 4H-SiC MOSFETs Through CV Characterization and TCAD Simulations
We investigated oxide and interface defects of lateral 4H-SiC MOSFETs through
capacitance-voltage (CV) and conductance-voltage (GV) characterization at various …
capacitance-voltage (CV) and conductance-voltage (GV) characterization at various …
Recovery of Quasi-Permanent Bias Temperature Instability in SiC MOSFETs and Its Physical Mechanism
K Li, P Sun, Z He, X Huang, Q Li… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
Bias temperature instability (BTI) is one of the key reliability issues for silicon carbide (SiC)
metal–oxide–semiconductor-field-effect transistors (MOSFETs). Currently, research on BTI …
metal–oxide–semiconductor-field-effect transistors (MOSFETs). Currently, research on BTI …
Analysis Of Power MOSFETs Failure Mechanisms Based On TCAD Model
J Du, C Chen, Z Wang, G Zhai - 2024 6th International …, 2024 - ieeexplore.ieee.org
Power MOSFETs are widely used in power electronics systems due to their excellent high-
frequency characteristics, but they are prone to degradation failure during long-term use …
frequency characteristics, but they are prone to degradation failure during long-term use …