An optical thin film can have a refractive index variation along a dimension that is
perpendicular to its thickness. Two areas that have equal physical thicknesses can have …

Amorphous silicon oxynitride thin films with composition varying from silicon nitride to silicon
oxide were deposited by rf sputtering of a silicon target under different argon–oxygen …

Int. Cl. An optical thin film can have a refractive index variation p GO2B 5/28(2006.01) along
a dimension that is perpendicular to its thickness. Two (52) US Cl. areas that have equal …

Silicon oxynitride (SixOyNz) buried layers were synthesized by high fluence (≥ 1× 1017
ions-cm− 2) ion implantation of O+ and N+ sequentially into single crystal silicon at 150 keV …

The present thesis was conducted under the Erasmus+ framework for education, in
collaboration between the School of Chemical Engineering of the National Technical …

The reactive ion implantation in silicon at different fluence levels varying from 5× 1016 to 1×
1018 ionscm− 2 was carried out at 30 keV to synthesize silicon dioxide (SiO2), silicon nitride …

Представлены результаты исследования локальной электронной структуры
монокристаллических образцов кремния< 111> с проводимостью n-типа методом …

Silicon oxynitride (SixOyNz) layers were synthesized by implanting 16O2+ and 14N2+
30keV ions in 1: 1 ratio with fluences ranging from 5× 1016 to 1× 1018ionscm− 2 into single …

The physico-chemical properties of silicon oxynitride (SiOXNY) thin films deposited by
plasma enhanced chemical vapour deposition technique (PECVD) from a mixture of SiH4 …

The local electronic structure of< 111> n-silicon single-crystal samples is studied using Si L
2, 3 x-ray emission spectroscopy. The Si x O y N z system is formed by implanting the …