Extreme ultraviolet lithography (EUVL) using 13.5 nm wavelength light is the leading
candidate to succeed 193 nm immersion lithography, enabling semiconductor chips with …

Extreme ultraviolet emission spectra of multiply charged Sn ions were measured in the
wavelength range 5–38 nm, following electron capture into the excited states of slow Sn …

Xenon and tin both are working elements applied in discharge plasmas that are being
developed for application in extreme ultraviolet (EUV) lithography. Their spectra in the 10 …

The formation of a current-plasma shell is studied during the expansion of a laser-ignited
low-power vacuum-discharge cathode plasma jet into the interelectrode gap. The shell …

Extreme ultraviolet (EUV) light generation by hybrid laser-assisted vacuum arc discharge
plasmas, utilizing Sn-coated rotating-disc-electrodes, was investigated. The discharge was …

Previous studies of metal nanoparticle plasmonic properties yielded various nontrivial
effects beyond the simple dipole response to light, such as the higher-order plasmon modes …

In this paper, we present transition probabilities for 97 spectral lines of Sn I, corresponding to
transitions n (n= 6, 7, 8) s→ 5p2, n (n= 5, 6, 7) d→ 5p2, 5p3→ 5p2, n (n= 7) p→ 6s …

Extreme ultra-violet emission spectra of multiply charged Xe and Sn ions are measured
following the electron capture in collisions with He. After the assumption of singleelectron …

In a previous series of Thomson scattering (TS) experiments on an extreme ultraviolet
producing vacuum arc discharge in tin vapor, background radiation emitted by the plasma …

Extreme ultra-violet (EUV) spectra of multiply charged tin ions were measured in the
wavelength range of 5-38 nm following the electron capture into excited states of slow Sn …