A review of self-heating effects in advanced CMOS technologies
C Prasad - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
The march toward dimensional scaling and higher performance has led the semiconductor
industry to consider nonplanar topologies and different material systems. These choices …
industry to consider nonplanar topologies and different material systems. These choices …
A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review
As foreseen by Keyes in the late 1960s, the self-heating effect has emerged as an important
concern for device performance, output power density, run-time variability, and reliability of …
concern for device performance, output power density, run-time variability, and reliability of …
Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs
For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …
Physical insights into vacancy-based memtransistors: toward power efficiency, reliable operation, and scalability
Memtransistors that combine the properties of transistor and memristor hold significant
promise for in-memory computing. While superior data storage capability is achieved in …
promise for in-memory computing. While superior data storage capability is achieved in …
Self-heating in advanced CMOS technologies
On advanced technology nodes, increases in power density, non-planar architectures and
different material systems can exacerbate local self-heating due to active power dissipation …
different material systems can exacerbate local self-heating due to active power dissipation …
On the trap locations in bulk FinFETs after hot carrier degradation (HCD)
In this brief, typical locations of the interface and oxide traps generated by the hot carrier
degradation (HCD) in FinFETs are studied with experiments and “atomistic” TCAD …
degradation (HCD) in FinFETs are studied with experiments and “atomistic” TCAD …
Integrated modeling of self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern …
The evolution of transistor topology from planar to confined geometry transistors (ie, FinFET,
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …
Hot carrier degradation-induced dynamic variability in FinFETs: Experiments and modeling
In this article, the dynamic variability induced by hot carrier degradation (HCD) in FinFETs is
studied with decomposing the variation contributions of multiple types of traps. The …
studied with decomposing the variation contributions of multiple types of traps. The …
Reliability assessment of 3nm GAA logic technology featuring multi-bridge-channel FETs
S Kim, H Park, E Choi, YH Kim, D Kim… - 2023 IEEE …, 2023 - ieeexplore.ieee.org
In this paper, we report reliability assessment of the Multi-Bridge-Channel FET (MBCFET)
adopted 3nm gate all around (GAA) logic technology in comparison with the 4 and 8nm …
adopted 3nm gate all around (GAA) logic technology in comparison with the 4 and 8nm …
Investigation of trap density effect in gate-all-around field effect transistors using the finite element method
M Belkhiria, F Aouaini, S A. Aldaghfag, F Echouchene… - Electronics, 2023 - mdpi.com
Trap density refers to the density of electronic trap states within dielectric materials that can
capture and release charge carriers (electrons or holes) in a semiconductor channel …
capture and release charge carriers (electrons or holes) in a semiconductor channel …