Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics
Two-dimensional electronics based on single-layer (SL) MoS2 offers significant advantages
for realizing large-scale flexible systems owing to its ultrathin nature, good transport …
for realizing large-scale flexible systems owing to its ultrathin nature, good transport …
GaN integrated circuit power amplifiers: Developments and prospects
R Nikandish - IEEE Journal of Microwaves, 2022 - ieeexplore.ieee.org
GaN integrated circuit technologies have dramatically progressed over the recent years. The
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …
prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output …
Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behavior
In this paper, a surface-potential-based compact model is proposed for the capacitance of
an AlGaN/GaN high-electron mobility transistor (HEMT) dual field-plate (FP) structure, ie …
an AlGaN/GaN high-electron mobility transistor (HEMT) dual field-plate (FP) structure, ie …
A 5.9-GHz fully integrated GaN frontend design with physics-based RF compact model
P Choi, S Goswami, U Radhakrishna… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
This paper presents the design of a fully integrated high-efficiency and high-power RF
frontend for the IEEE 802.11 p standard in GaN HEMT technology. An embedded …
frontend for the IEEE 802.11 p standard in GaN HEMT technology. An embedded …
Modeling gallium-nitride based high electron mobility transistors: Linking device physics to high voltage and high frequency circuit design
U Radhakrishna - 2016 - dspace.mit.edu
Gallium-Nitride-based high electron mobility transistor (HEMTs) technology is increasingly
finding space in high voltage (HV) and high frequency (HF) circuit application domains. The …
finding space in high voltage (HV) and high frequency (HF) circuit application domains. The …
Physical modeling of charge trapping effects in GaN/Si devices and incorporation in the ASM-HEMT model
M Pradhan, M Alomari, M Moser… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
In this work, the dynamic behavior of gallium nitride on silicon high electron mobility
transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine …
transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine …
Physics-based compact models: An emerging trend in simulation-based GaN HEMT power amplifier design
S Khandelwal - 2019 IEEE 20th Wireless and Microwave …, 2019 - ieeexplore.ieee.org
An important and impactful trend in GaN HEMT transistor model representation is the
emergence of physics-based compact models. Developed from device physics, these …
emergence of physics-based compact models. Developed from device physics, these …
A scalable knowledge-based neural network model for GaN HEMTs with accurate trapping and self-heating effects characterization
In this article, a scalable knowledge-based neural network (KBNN) large-signal model of
gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with accurate trapping and …
gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with accurate trapping and …
Thermal stability and failure mechanism of Schottky gate AlGaN/GaN HEMTs
M Mocanu, C Unger, M Pfost… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
This paper investigates the electrothermal stability and the predominant defect mechanism
of a Schottky gate AlGaN/GaN HEMT. Calibrated 3-D electrothermal simulations are …
of a Schottky gate AlGaN/GaN HEMT. Calibrated 3-D electrothermal simulations are …
Insight into buffer trap-induced current saturation and current collapse in GaN RF heterojunction field-effect transistors
DC Tripathi, MJ Uren, D Ritter - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
Buffer traps in GaN RF heterostructure field-effect transistors (HFETs) provide a high dc
output resistance on one hand but induce the current collapse effect on the other hand …
output resistance on one hand but induce the current collapse effect on the other hand …