III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Controlled formation of non-equilibrium crystal structures is one of the most important
challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying …

Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

Based on the recent achievements in vapor–liquid–solid (VLS) synthesis, characterization
and modeling of ternary III–V nanowires and axial heterostructures within such nanowires …

III–V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB)
crystal structure, and pure crystal phase wires represent the exception rather than the rule. In …

Many efficient light-emitting devices and photodetectors are based on semiconductors with,
respectively, a direct or indirect bandgap configuration. The less known pseudodirect …

We investigate the full and half-shells of Pb1− x Sn x Te topological crystalline insulator
deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs) …

Semiconductor nanowires offer the opportunity to incorporate novel structures and
functionality into electronic and optoelectronic devices. A clear understanding of the …

Achieving quantum confinement by bottom-up growth of nanowires has so far been limited
to the ability of obtaining stable metal droplets of radii around 10 nm or less. This is within …

We present a kinetic growth model having a particular emphasis on the influence of the
group V element on the preferred crystal structure of Au-catalyzed III-V nanowires. The …