The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …

A comparative analysis of the residual stress distributions across the conductive channel of
Ga-face AlGaN/GaN high electron mobility transistors (HEMTs) is presented. Stress was …

An Fe-doped GaN buffer layer was employed in the growth of AlGaN/GaN high-electron
mobility transistors (HEMTs) on Si substrates. In order to investigate the effects of an Fe …

The issues and challenges of growing GaN-based structures on large area Si substrates
have been studied. These include Si slip resulting from large temperature non-uniformities …

GaN epilayers were grown on lens-shaped-pattern sapphire substrate (PSS)(0001) and
unpatterned sapphire substrate (UPSS)(0001) by metal-organic chemical vapor deposition …

GaN have sphalerite structure (Cubic-GaN) and wurtzite structure (hexagonal GaN). We
report the H-GaN epilayer with a LT-AlN buffer layer has been grown on Si (111) substrate …

Nanoheteroepitaxial (NHE) lateral overgrowth of GaN on nanoporous Si (111) substrates
has been demonstrated. Nanopore arrays in Si (111) surfaces were fabricated using …

The ability to configure the optimal buffer layer for GaN growth depends on the knowledge of
relaxation processes that occurs during the cooling step while countering the tensile …

AlN/GaN superlattice buffer is inserted between GaN epitaxial layer and Si substrate before
epitaxial growth of GaN layer. High-quality and crack-free GaN epitaxial layers can be …

In this study, a 2in. sized a highly periodic nanometer-scaled patterned sapphire substrate
(NPSS) was fabricated using nanoimprint lithography (NIL) and inductively coupled plasma …