BACKGROUND A newly-designed integrated circuit (“IC) is typically fab ricated over a
process of several weeks, involving preparation of silicon Substrate wafers, generation of …

(57) ABSTRACT A system for analyzing a thin film uses an energy beam, Such as a laser
beam, to remove a portion of a contaminant layer formed on the thin film Surface. This …

Method, device, and system, for directed multi-deflected ion beam milling of a work piece,
and, determining and con trolling extent thereof. Providing an ion beam; and directing and at …

Process options of FIB circuit edit accessing active area in silicon through chip backside are
presented. The full process is divided in modules. The technological readiness of the …

Method, device, and system, for directed multi-deflected ion beam milling of a work piece,
and, determining and controlling extent thereof. Providing an ion beam; and directing and at …

A system for analyzing a thin film uses an energy beam, such as a laser beam, to remove a
portion of a contaminant layer formed on the thin film surface. This cleaning operation …

BACKGROUND A newly-designed integrated circuit (“IC) is typically fab ricated over a
process of several weeks, involving preparation of silicon Substrate wafers, generation of …

A method and apparatus for controlling the removal of material from a semiconductor
substrate in an integrated circuit fabrication process is disclosed. The method and apparatus …

A system and method for determining precisely in-situ the endpoint of halogen-assisted
charged particle beam milling of a hole or trench in the backside of the substrate of a flipchip …

469 leakage current with an amplifier, narrow-band amplifier or lock-in amplifier. The
precise, in-situ, endpoint Signal is processed and displayed for manual or automatic precise …