Elementary processes in nanowire growth

KW Schwarz, J Tersoff - Nano letters, 2011 - ACS Publications
We propose that many of the complex morpho-logical phenomena observed during
nanowire growth arise from the interplay of just three elementary processes: facet growth …

Changes in contact angle of seed particle correlated with increased zincblende formation in doped InP nanowires

J Wallentin, M Ek, LR Wallenberg, L Samuelson… - Nano …, 2010 - ACS Publications
Nanowires grown with the vapor− liquid− solid method commonly exhibit polytypism,
showing both zincblende and wurtzite crystal structure. We have grown p-type InP …

Identification of an intrinsic source of doping inhomogeneity in vapor–liquid–solid-grown nanowires

JG Connell, KH Yoon, DE Perea, EJ Schwalbach… - Nano …, 2013 - ACS Publications
The vapor–liquid–solid (VLS) process of semiconductor nanowire growth is an attractive
approach to low-dimensional materials and heterostructures because it provides a …

Nanoparticle stability in axial InAs–InP nanowire heterostructures with atomically sharp interfaces

V Zannier, F Rossi, VG Dubrovskii, D Ercolani… - Nano …, 2018 - ACS Publications
The possibility to expand the range of material combinations in defect-free heterostructures
is one of the main motivations for the great interest in semiconductor nanowires. However …

Composition of gold alloy seeded InGaAs nanowires in the nucleation limited regime

J Johansson, M Ghasemi - Crystal Growth & Design, 2017 - ACS Publications
We explain the composition of gold alloy particle seeded InGaAs nanowires in the
nucleation limited regime. We use binary nucleation modeling to account for the nucleation …

Identifying crystallization-and incorporation-limited regimes during vapor–liquid–solid growth of Si nanowires

CW Pinion, DP Nenon, JD Christesen, JF Cahoon - Acs Nano, 2014 - ACS Publications
The vapor–liquid–solid (VLS) mechanism is widely used for the synthesis of semiconductor
nanowires (NWs), yet several aspects of the mechanism are not fully understood. Here, we …

InP nanoflag growth from a nanowire template by in situ catalyst manipulation

A Kelrich, O Sorias, Y Calahorra, Y Kauffmann… - Nano …, 2016 - ACS Publications
Quasi-two-dimensional semiconductor materials are desirable for electronic, photonic, and
energy conversion applications as well as fundamental science. We report on the synthesis …

Droplet dynamics in controlled InAs nanowire interconnections

D Dalacu, A Kam, DG Austing, PJ Poole - Nano letters, 2013 - ACS Publications
Semiconductor nanowires offer a versatile platform for the fabrication of new nanoelectronic
and nanophotonic devices. These devices will require a high level of control of the nanowire …

Phase-field model of vapor-liquid-solid nanowire growth

N Wang, M Upmanyu, A Karma - Physical Review Materials, 2018 - APS
We present a multiphase-field model to describe quantitatively nanowire growth by the
vapor-liquid-solid (VLS) process. The free-energy functional of this model depends on three …

Microscopic Characteristics of Kinking Phenomenon in Vertically Free-Standing Nanowires

Z Razaghi, G Zhu - Crystals, 2023 - mdpi.com
Vertically free-standing nanowires, synthesized through vapor-based growth, can undergo
changes in their growth directions known as kinking. These alterations can significantly …