In fast allen Kapiteln wurden kleinere Umstellungen und einige Ergänzungen mit einem
Zusatzseitenumfang von ca. 70-Seiten vorgenommen. Hier wird berücksichtigt, dass den …

The high brittleness and hardness are harmful to the machinability of silicon carbide (SiC).
To improve machinability, femtosecond laser (fs laser) surface modification was conducted …

Silicon carbide is widely used as ultra high-temperature ceramics, semiconductors, and
pressure sensors with promising potentials for high-temperature, high-endurance, and …

A study is presented aimed at describing phenomena involved in Single Event Burnout
induced by heavy ion irradiation in SiC Schottky diodes. On the basis of experimental data …

Inclusion, a common three-dimension defect, can be introduced during SiC epitaxy. In this
study, we constructed nano-scratching molecular dynamics models embedded in two …

Silicon carbide with optically and magnetically active point defects offers unique
opportunities for quantum technology applications. Since interaction with these defects …

Silicon carbide (SiC) has become increasingly important for use in the optoelectronics
industry due to its unique properties. Achieving higher precision in SiC machining presents …

Silicon carbide is a sound semiconductor material because of its good performance in high-
voltage and high-frequency fields. However, micropipe—a special 3 dimensions defect …

Interatomic potentials play a crucial role in the molecular dynamics (MD) simulation of silicon
carbide (SiC). However, the ability of interatomic potentials to accurately describe certain …

Surface modification layers play a crucial role in enhancing machinability during reaction-
assisted machining due to the interrelated behavior of the surface and interface resulting …