Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …

Novel hafnium oxide (HfO2)‐based ferroelectrics reveal full scalability and complementary
metal oxide semiconductor integratability compared to perovskite‐based ferroelectrics that …

Since 2011, ferroelectric HfO2 has attracted growing interest in both fundamental and
application oriented groups. In this material, noteworthy wake‐up and fatigue effects alter …

Recent explosion of interest in two-dimensional (2D) materials research has led to extensive
exploration of physical and chemical phenomena unique to this new class of materials and …

Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …

Abstract Reliable, inexpensive, environment-friendly, and durable properties of carbon
materials with unique and outstanding photoelectric performance is highly desired for …

Thin dielectric films are essential components of most micro‐and nanoelectronic devices,
and they have played a key role in the huge development that the semiconductor industry …

To date antiferroelectrics have not been considered as nonvolatile memory elements
because a removal of the external field causes a depolarization, resulting in a loss of the …

We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …