A review of SiC IGBT: models, fabrications, characteristics, and applications
L Han, L Liang, Y Kang, Y Qiu - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
Along with the increasing maturity for the material and process of the wide bandgap
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …
[图书][B] Gallium nitride and silicon carbide power devices
BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …
of gallium nitride and silicon carbide device structures, resulting in experimental …
Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions
K Vechalapu, S Bhattacharya… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
The 15-kV silicon carbide (SiC) MOSFET and 15-kV SiC IGBT are the two state-of-the-art
high-voltage SiC devices. These high-voltage SiC devices enable simple two-level …
high-voltage SiC devices. These high-voltage SiC devices enable simple two-level …
[HTML][HTML] Solid-state transformers in locomotives fed through AC lines: A review and future developments
S Farnesi, M Marchesoni, M Passalacqua, L Vaccaro - Energies, 2019 - mdpi.com
One of the most important innovation expectation in railway electrical equipment is the
replacement of the on-board transformer with a high power converter. Since the transformer …
replacement of the on-board transformer with a high power converter. Since the transformer …
A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT
K Mainali, A Tripathi… - IEEE Power …, 2015 - ieeexplore.ieee.org
The solid-state transformer (SST) is a promising power electronics solution that provides
voltage regulation, reactive power compensation, dc-sourced renewable integration, and …
voltage regulation, reactive power compensation, dc-sourced renewable integration, and …
Development of ultrahigh-voltage SiC devices
K Fukuda, D Okamoto, M Okamoto… - … on Electron Devices, 2014 - ieeexplore.ieee.org
Ultrahigh-voltage silicon carbide (SiC) devices [pin diodes and insulated-gate bipolar
transistors (IGBTs)] and switching test have been investigated. As a result, we have …
transistors (IGBTs)] and switching test have been investigated. As a result, we have …
Review of wide bandgap materials and their impact in new power devices
D Garrido-Diez, I Baraia - 2017 IEEE International workshop of …, 2017 - ieeexplore.ieee.org
Power electronic converters use semiconductors to satisfy the needs of different
applications. Nowadays, these semiconductors are mainly based on Silicon (Si), which can …
applications. Nowadays, these semiconductors are mainly based on Silicon (Si), which can …
Performance comparison of 10 kV# x2013; 15 kV high voltage SiC modules and high voltage switch using series connected 1.7 kV LV SiC MOSFET devices
K Vechalapu, S Bhattacharya - 2016 IEEE Energy Conversion …, 2016 - ieeexplore.ieee.org
The 10 kV-to-15 kV SiC MOSFET and 15-kV SiC IGBT are state-of-the-art high-voltage (HV)
devices designed by Cree Inc. These devices are expected to increase the power density of …
devices designed by Cree Inc. These devices are expected to increase the power density of …
A MV intelligent gate driver for 15kV SiC IGBT and 10kV SiC MOSFET
A Tripathi, K Mainali… - 2016 IEEE Applied …, 2016 - ieeexplore.ieee.org
This paper presents an Intelligent Medium-voltage Gate Driver (IMGD) for 15kV SiC IGBT
and 10kV SiC MOSFET devices. The high voltage-magnitude and high dv/dt (> 30kV/μs) of …
and 10kV SiC MOSFET devices. The high voltage-magnitude and high dv/dt (> 30kV/μs) of …
Power loss analysis of medium-voltage three-phase converters using 15-kV/40-A SiC N-IGBT
S Madhusoodhanan, K Mainali… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
Medium-voltage (MV) silicon carbide (SiC) devices such as the 15-kV SiC N-insulated gate
bipolar transistor (IGBT) have better thermal withstanding capability compared with silicon …
bipolar transistor (IGBT) have better thermal withstanding capability compared with silicon …