Exploration and development of advanced materials with desired electrochemical
performance is highly needed for supercapacitors and the oxygen evolution reaction (OER) …

In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier
diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were …

Hydrogen generation during wastewater treatment has remained a long-standing challenge
for the environment preservation welfare. In the present work, we have fabricated a …

Electrochemical oxidation of urea is of great importance in the removal and energy
exchange and storage of urea from wastewater as well as of potential applications in …

Vertical GaN-on-GaN Schottky barrier diode (SBD) fully grown by hydride vapor phase
epitaxy (HVPE) was first demonstrated in this article. Due to the low-carbon impurity …

For the first time, a multilayer heterostructure consisting of periodically arranged GaN and
AlN layers was formed by chloride-hydride gas-phase epitaxy on a SiC/Si hybrid substrate …

AlGaN/GaN hetero-structure based High electron mobility transistor (HEMT) is one of the
emerged electronic devices for high power and high frequency applications. In this report …

We report on p-channel metal-insulator-semiconductor heterostructure field-effect transistors
(MISHFET) based on p-GaN/uid-GaN/Al textsubscript 0.29 Ga textsubscript 0.71 N single …

We report the growth evolution of high-quality epitaxial aluminum nitride using nitrogen as
carrier gas on the sapphire substrate using MOCVD. A series of samples were grown with …

Problems of the growth of nanoscale columnar Al x Ga 1-x N/AlN heterostructures on hybrid
substrates involving porous silicon and silicon carbide layers by molecular beam epitaxy …