State-of-the-art review on soft-switching technologies for non-isolated DC-DC converters

XF Cheng, C Liu, D Wang, Y Zhang - IEEE Access, 2021 - ieeexplore.ieee.org
The soft-switching technology is widely used in DC-DC converters, DC-AC inverters, and AC-
DC rectifiers. Soft-switching non-isolated DC/DC converters (Buck, Boost, and Buck-Boost) …

Gate and base drivers for silicon carbide power transistors: An overview

D Peftitsis, J Rabkowski - IEEE Transactions on Power …, 2015 - ieeexplore.ieee.org
Silicon carbide (SiC) power transistors have started gaining significant importance in various
application areas of power electronics. During the last decade, SiC power transistors were …

Gate oxide reliability issues of SiC MOSFETs under short-circuit operation

TT Nguyen, A Ahmed, TV Thang… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Silicon-Carbide (SiC) MOSFETs, due to material properties, are designed with smaller
thickness in the gate oxide and a higher electric field compared to Si MOSFETs …

A quasi-resonant current-fed converter with minimum switching losses

SS Dobakhshari, J Milimonfared… - … on Power Electronics, 2016 - ieeexplore.ieee.org
A quasi-resonant dc-dc converter with high voltage gain and low current stresses on
switches is proposed in this paper. This converter preserved inherent advantages of current …

Auxiliary power supplies for high-power converter submodules: State of the art and future prospects

S Heinig, K Jacobs, K Ilves, S Norrga… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Recent developments in medium-voltage (MV) silicon and silicon carbide (SiC) power
semiconductor devices are challenging state-of-the-art converter and auxiliary power supply …

Time-domain analysis of a phase-shift-modulated series resonant converter with an adaptive passive auxiliary circuit

A Safaee, M Karimi-Ghartemani… - … on Power Electronics, 2016 - ieeexplore.ieee.org
This paper presents a comprehensive time-domain analysis of series resonant converters
operating with phase-shift-modulated full-bridge above resonance. Closed-form formulas for …

A novel active gate driver for silicon carbide MOSFET

A Paredes, V Sala, H Ghorbani… - IECON 2016-42nd …, 2016 - ieeexplore.ieee.org
A novel active gate driver (AGD) for silicon carbide (SiC) MOSFET is studied in this paper.
The gate driver (GD) increases the gate resistance value during the voltage plateau area of …

Evaluation of reverse recovery characteristic of silicon carbide metal–oxide–semiconductor field‐effect transistor intrinsic diode

Z Wang, J Zhang, X Wu, K Sheng - IET Power Electronics, 2016 - Wiley Online Library
To use the silicon carbide (SiC) metal–oxide–semiconductor field‐effect transistor
(MOSFET) intrinsic diode as a freewheeling diode in a power converter, its reverse recovery …

DAB modulation schema with extended ZVS region for applications with wide input/output voltage

A Garcia‐Bediaga, I Villar, A Rujas… - IET Power Electronics, 2018 - Wiley Online Library
This study is focused on modulation strategies and soft‐switching techniques of the isolated
dual‐active‐bridge (DAB) converter for power‐electronics applications, where wide …

Towards automated statistical partial discharge source classification using pattern recognition techniques

H Janani, B Kordi - High Voltage, 2018 - Wiley Online Library
This study presents a comprehensive review of the automated classification in partial
discharge (PD) source identification and probabilistic interpretation of the classification …