The structural and optical properties of lattice-matched InAs 0.911 Sb 0.089 bulk layers and
strain-balanced InAs/InAs 1− x Sb x (x∼ 0.1–0.4) superlattices grown on (100)-oriented …

We have developed a novel dispersion-related model for monotonic temperature
dependencies of fundamental band gaps, E g (T), and the associated excitonic absorption …

THz absorption and spectroscopic ellipsometry were used to investigate the charge
dynamics and electronic structures of chemical-vapor-deposited monolayer MoS 2 films …

Short‐wavelength infrared (SWIR) photodetectors are of great interest owing to their unique
advantages of SWIR imaging such as better penetration ability and improved sensitivity that …

Efficient interconnection between distant semiconductor spin qubits with the help of photonic
qubits offers exciting new prospects for future quantum communication applications. In this …

Starting from general foundations of the semi‐empirical theory of monotonic temperature
dependences of band gaps in semiconductors, we devote ourselves in this article to further …

A bandgap bowing parameter of 0.4±0.2 eV for β-(Al x Ga 1− x) 2 O 3 alloys, with Al
compositions (x) up to 0.35, has been determined from the bandgap obtained from low …

The GaAsBiN denoted highly mismatched alloy is among the new material that has drawn
attention regarding its special physical properties. The co-alloying of GaAs by simultaneous …

Advancements in photonic quantum information systems (QIS) have driven the development
of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots …

GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by
molecular-beam epitaxy with different N concentrations were studied using the …