[HTML][HTML] Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
PT Webster, NA Riordan, S Liu… - Journal of Applied …, 2015 - pubs.aip.org
The structural and optical properties of lattice-matched InAs 0.911 Sb 0.089 bulk layers and
strain-balanced InAs/InAs 1− x Sb x (x∼ 0.1–0.4) superlattices grown on (100)-oriented …
strain-balanced InAs/InAs 1− x Sb x (x∼ 0.1–0.4) superlattices grown on (100)-oriented …
Dispersion-related description of temperature dependencies of band gaps in semiconductors
R Pässler - Physical Review B, 2002 - APS
We have developed a novel dispersion-related model for monotonic temperature
dependencies of fundamental band gaps, E g (T), and the associated excitonic absorption …
dependencies of fundamental band gaps, E g (T), and the associated excitonic absorption …
Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition
THz absorption and spectroscopic ellipsometry were used to investigate the charge
dynamics and electronic structures of chemical-vapor-deposited monolayer MoS 2 films …
dynamics and electronic structures of chemical-vapor-deposited monolayer MoS 2 films …
Toward Ga‐Free Wavelength Extended 2.6 µm InAsP Photodetectors with High Performance
Short‐wavelength infrared (SWIR) photodetectors are of great interest owing to their unique
advantages of SWIR imaging such as better penetration ability and improved sensitivity that …
advantages of SWIR imaging such as better penetration ability and improved sensitivity that …
Modeling an efficient singlet-triplet-spin-qubit-to-photon interface assisted by a photonic crystal cavity
K Wu, S Kindel, T Descamps, T Hangleiter, JC Müller… - Physical Review …, 2024 - APS
Efficient interconnection between distant semiconductor spin qubits with the help of photonic
qubits offers exciting new prospects for future quantum communication applications. In this …
qubits offers exciting new prospects for future quantum communication applications. In this …
Semi‐empirical descriptions of temperature dependences of band gaps in semiconductors
R Pässler - physica status solidi (b), 2003 - Wiley Online Library
Starting from general foundations of the semi‐empirical theory of monotonic temperature
dependences of band gaps in semiconductors, we devote ourselves in this article to further …
dependences of band gaps in semiconductors, we devote ourselves in this article to further …
[HTML][HTML] Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1− x) 2O3 alloys for x≤ 0.35 determined from low temperature optical reflectivity
J Bhattacharjee, S Ghosh, P Pokhriyal, R Gangwar… - AIP Advances, 2021 - pubs.aip.org
A bandgap bowing parameter of 0.4±0.2 eV for β-(Al x Ga 1− x) 2 O 3 alloys, with Al
compositions (x) up to 0.35, has been determined from the bandgap obtained from low …
compositions (x) up to 0.35, has been determined from the bandgap obtained from low …
Performance optimization of AlGaAs/GaAsBiN resonant tunneling diode
The GaAsBiN denoted highly mismatched alloy is among the new material that has drawn
attention regarding its special physical properties. The co-alloying of GaAs by simultaneous …
attention regarding its special physical properties. The co-alloying of GaAs by simultaneous …
Control of Quantized Spontaneous Emission from Single GaAs Quantum Dots Embedded in Huygens' Metasurfaces
Advancements in photonic quantum information systems (QIS) have driven the development
of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots …
of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots …
Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy
GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by
molecular-beam epitaxy with different N concentrations were studied using the …
molecular-beam epitaxy with different N concentrations were studied using the …