Influence of data scaling and normalization on overall neural network performances in photoacoustics
КL Djordjević, MI Jordović-Pavlović… - Optical and Quantum …, 2022 - Springer
In this paper, the influence of the input and output data scaling and normalization on the
neural network overall performances is investigated aimed at inverse problem-solving in …
neural network overall performances is investigated aimed at inverse problem-solving in …
Influence of thermal nonequilibrium on recombination, space charge, and transport phenomena in bipolar semiconductors
IC Ballardo Rodriguez, B El Filali, OY Titov… - International Journal of …, 2020 - Springer
A detailed analysis of the influence of thermal nonequilibrium on transport in
semiconductors was carried out. Special attention was paid to the effect of this …
semiconductors was carried out. Special attention was paid to the effect of this …
Effects of the photogenerated excess carriers on the thermal and elastic properties of n-type silicon excited with a modulated light source: Theoretical analysis
DK Markushev, DD Markushev, S Aleksić… - Journal of Applied …, 2019 - pubs.aip.org
The photogenerated excess carriers' influence on the temperature distribution and
thermoelastic photoacoustic signals of n-type silicon excited with a light source of modulated …
thermoelastic photoacoustic signals of n-type silicon excited with a light source of modulated …
Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon
DK Markushev, DD Markushev, SM Aleksić… - Journal of Applied …, 2020 - pubs.aip.org
Based on the experimental and theoretical signals of an open photoacoustic cell operating
with modulation frequencies from 20 Hz to 20 kHz, a significant contribution of …
with modulation frequencies from 20 Hz to 20 kHz, a significant contribution of …
Electronic characterization of plasma-thick n-type silicon using neural networks and photoacoustic response
In this paper, electronic semiconductor characterization using reverse-back procedure was
applied to different photoacoustic responses aiming to find effective ambipolar diffusion …
applied to different photoacoustic responses aiming to find effective ambipolar diffusion …
Transmission pulse photoacoustic response of thin semiconductor plate
In modern high-speed semiconductor electronics, there is a high-rate heating of components
that is affected by very fast relaxation processes. The relaxation times of these processes …
that is affected by very fast relaxation processes. The relaxation times of these processes …
Photothermally induced temperature variations in a low-absorption sample via backside absorption
VV Miletic, MN Popovic, SP Galovic… - Journal of Applied …, 2023 - pubs.aip.org
In order to make the photothermal effect detectable from a sample with low optical
absorption, an optically opaque layer must be applied on its surface. A model of optically …
absorption, an optically opaque layer must be applied on its surface. A model of optically …
Development and comparison of the techniques for solving the inverse problem in photoacoustic characterization of semiconductors
In this work, theoretically/mathematically simulated (TMS) model is presented for the
photoacoustic (PA) frequency response of a semiconductor in a minimum volume PA cell. By …
photoacoustic (PA) frequency response of a semiconductor in a minimum volume PA cell. By …
Photoacoustic optical semiconductor characterization based on machine learning and reverse-back procedure
This paper introduces the possibility of the determination of optical absorption and reflexivity
coefficient of silicon samples using neural networks and reverse-back procedure based on …
coefficient of silicon samples using neural networks and reverse-back procedure based on …
Photoacoustic Characterization of TiO2 Thin-Films Deposited on Silicon Substrate Using Neural Networks
KL Djordjević, DK Markushev, MN Popović, MV Nesić… - Materials, 2023 - mdpi.com
In this paper, the possibility of determining the thermal, elastic and geometric characteristics
of a thin TiO2 film deposited on a silicon substrate, with a thickness of 30 μm, in the …
of a thin TiO2 film deposited on a silicon substrate, with a thickness of 30 μm, in the …