Organic electronics have become an active topic of research in the area of semiconductor
transistors. Organic-field effect transistors (OFET) which uses special organic compounds …

In this work, a novel N+ SiGe delta-doped gate stacked junctionless vertical tunnel field
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …

This paper explores the Vertical tunnel FET with the introduced layer of SiGe within the
channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade …

In this paper a new ferro material embedded structure is introduced between the tunneling
junction to gain and improve ON/OFF current ratio with steeper subthreshold slope. Various …

Power dissipation is the key factor that is considered while designing low-power circuits.
Complementary metal oxide semiconductor (CMOS) technology faces a major challenge in …

In this work, a triple metal gate-ferroelectric material-with SiGe heterojunction based vertical
structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and …

The effect of ferroelectric material at tunneling junction is compared for the two different
configuration of Charge plasma and Junctionless of Vertical TFET structure. Various …

This chapter provides an overview of the message-oriented architectural pattern. The core
components of this type of system are explained, and an overview of common messaging …

The unique characteristics of nanowire field effect transistors (NW FETs), such as high
electron mobility, low power consumption, and scalability, have made them a promising …

This chapter presents static random access memory (SRAM) cell design for low power
applications. It is well known that the mathematical modeling and manual computations of …