Silicon carbide (SiC) power devices have been investigated extensively in the past two
decades, and there are many devices commercially available now. Owing to the intrinsic …

Along with the increasing maturity for the material and process of the wide bandgap
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …

This chapter intends to provide a comprehensive and comparative discussion of various
important power device technologies which are critical for industrial, smart grid and …

A sustainable energy future requires power electronics that can enable significantly higher
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …

Due to much higher achievable blocking voltage and faster switching speed, power devices
based on wide bandgap (WBG) silicon carbide (SiC) material are ideal for medium voltage …

This paper proposes a novel two-level single-stage direct ac-ac converter for realizing a 7.2-
kV medium-voltage (MV) solid-state transformer (SST) based on 15-kV SiC mosfets. A new …

SiC power devices have the ability to greatly outperform their Silicon counterparts. SiC
material quality and cost issues have largely been overcome, allowing SiC to start …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

With the increasing demand of silicon carbide (SiC) power devices that outperform the
silicon-based devices, high cost and low yield of SiC manufacturing process are the most …

This paper discusses the design of a 10 kV and 200 A hybrid dc circuit breaker suitable for
the protection of the dc power systems in electric ships. The proposed hybrid dc circuit …