Microstructural, optical and electrical properties of boron subphthalocyanine chloride (B-
SubPc-Cl) were investigated in order to use it in energy applications. Field emission …

In this study, morphological properties and Schottky diode application of mpg-C 3 N 4
material were investigated. XRD, SEM and TEM analyzes of this material were performed …

The 8 wt% rare earth (RE= Ce, Gd, and Y) doped zirconium dioxide (ZrO 2) thin films were
prepared on glass substrates by spin-coating technique and annealed at 600° C. Also, the …

Radio frequency magnetron sputtered Al-doped zinc oxide (AZO) thin films were formed on
n-type gallium nitride (GaN). X-ray diffraction reflections and Raman modes confirmed the …

The paper presents a new approach based on the appearance of negative capacitance
(NC) at high and low frequencies; previously, researchers agreed that NC only occurred at …

The aim of this study is to improve the electrical property of Ag/n-Si metal–semiconductor
(MS) structure by growing an Ru-doped PVP interlayer between Ag and n-Si using …

Abstract The Al/n-type Si Schottky barrier diodes (SBDs) were prepared with Au-Cu
phthalocyanine (Au-CuPc) interlayers with different Au and CuPc compositional ratios …

Improvement the efficacy of Al/CuPc/n-Si/Al Schottky diode based on strong light absorption
and high photocarriers response - IOPscience This site uses cookies. By continuing to use this …

Abstract An Au/Ni/β-Ga 2 O 3 Schottky barrier diode was fabricated on an 8.6-μm-thick lightly
doped drift region grown on heavily doped Ga 2 O 3 substrate, and its electrical and low …

In this study, Au/n-Si structures with PVP polymer interlayer were fabricated and
characterized using capacitance/conductance–voltage–frequency (C/G–V–f) …