Ga2O3 is a wide bandgap semiconductor suitable for solar‐blind photodetection, but there
exist two issues for Ga2O3‐based photodetectors: first, it is difficult to achieve reliable p‐type …

Emergent behavior at oxide interfaces has driven research in complex oxide films for the
past 20 years. Interfaces have been engineered for applications in spintronics, topological …

Recent advances in the growth of epitaxial oxide thin films have fostered a steady increase
of research on perovskite oxide heterojunctions, which are now produced with …

The polarity of oxide surfaces can dramatically impact their surface reactivity, in particular,
with polar molecules such as water. The surface species that result from this interaction …

Interface structure at polar-nonpolar interfaces has been shown to be a key factor in
controlling emergent behavior in oxide heterostructures, including the LaFeO 3/n-SrTiO 3 …

The crystal plane with the highest electron and hole mobility in a material is very important to
physical and chemical properties. Herein, the BiVO 4 (BVO) thin films exposed (0 1 0) or (1 0 …

Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of
LaAlO3/SrTiO3 (LAO/STO), improving carrier mobility has become an important issue for …

LaVO 3 (LVO) is particularly interesting due to its optical band gap of around 1.1 eV, which is
close to the one of silicon (1.12 eV) and can be an interesting light-absorbing material for …

LaCr O 3 (LCO)/SrTi O 3 (STO) heterojunctions are intriguing due to a polar discontinuity
along [001], exhibiting two distinct and controllable charged interface structures [(LaO)+/(Ti …

We investigate the surface electronic structure of SrTiO 3 (STO) films grown by a hybrid
molecular beam epitaxy that are both stoichiometric and nonstoichiometric by means of x …