This review presents the available experimental and theoretical understanding on the
structure and electronic properties of grain boundaries in semiconducting materials. High …

The sol–gel method is efficient and cost‐effective for synthesizing SnO2 sol, wherein SnO2
nanocrystallites (NCs) are stabilized by electric double‐layer of solvated ions tightly bound …

A quantitative trapping model is introduced to describe the electrical properties of a
semiconductor-grain-boundary-semiconductor (SGBS) barrier in polysilicon films over a …

A theory of conduction in polycrystalline silicon is presented. The present approach
fundamentally differs from previous theories in its treatment of the grain boundary. This …

We discuss thermal evaporation of Germanium thin films as a suitable route to realizing near-
infrared detectors integrated on a Silicon platform. We study the structural properties of …

We report pump-probe measurements of time resolved optical transmission spectra of Si
and Si/poly-Si microrings after high free carrier densities have been generated by two …

Measurements of the zero-bias dc conductance Go and high frequency capacitance have
been made on GaAs bicrystals doped in the range of 4 X 1017-2 X 1018 cm-3. The …

In this paper the effects of grain size and doping concentration on the resistivity of
polycrystalline silicon are investigated. A new relation is presented for the resistivity of large …

The electrical properties of heavily In-doped polycrystaUine CdS films have been studied as
a function of the doping level. The films were prepared by vacuum coevaporation of CdS …

Polycrystalline silicon and zinc oxide ceramic are important electronic materials. The
electrical properties which determine the applications of polycrystalline silicon in integrated …