Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications
CY Lin, PC Wang, YH Huang, WB Liao… - ACS Materials …, 2023 - ACS Publications
Realizing robust field-free current-induced switching of perpendicular magnetization is of
utmost importance to make spin–orbit torque (SOT) magnetic random-access memory …
utmost importance to make spin–orbit torque (SOT) magnetic random-access memory …
Spin logic operated by unipolar voltage inputs
L Zhao, M Yang, J Gao, T Yang, Y Cui… - IEEE Electron …, 2022 - ieeexplore.ieee.org
We propose and demonstrate a reconfigurable logic gate based on a single spin-orbit
torque magnetic tunnel junction (SOT-MTJ) device operated by unipolar voltage inputs. The …
torque magnetic tunnel junction (SOT-MTJ) device operated by unipolar voltage inputs. The …
A Potential Enabler for High-Performance In-Memory Multi-Bit Arithmetic Schemes With Unipolar Switching SOT-MRAM
Due to the physical separation of data processing and storage, the conventional Von
Neumann architecture exists excessive data migration overhead to curtail the progress of …
Neumann architecture exists excessive data migration overhead to curtail the progress of …
XOR-CiM: An efficient computing-in-SOT-MRAM design for binary neural network acceleration
In this work, we leverage the uni-polar switching behavior of Spin-Orbit Torque Magnetic
Random Access Memory (SOT-MRAM) to develop an efficient digital Computing-in-Memory …
Random Access Memory (SOT-MRAM) to develop an efficient digital Computing-in-Memory …